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Datasheets for LOW NOIS

Datasheets found :: 9618
Page: | 57 | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 |
No. Part Name Description Manufacturer
1801 BFP196W NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications) Siemens
1802 BFP280 NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) Siemens
1803 BFP280W NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) Siemens
1804 BFP420 RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers Infineon
1805 BFP420 NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) Siemens
1806 BFP420F RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers in NEW thin small flatlead package TSFP-4 Infineon
1807 BFP520 RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers Infineon
1808 BFP520 NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) Siemens
1809 BFP520F RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers in NEW thin small flatlead package TSFP-4 Infineon
1810 BFP540 RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers Infineon
1811 BFP540F RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain LNA in NEW thin small flatlead package TSFP-4 Infineon
1812 BFP620E7764 RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package Infineon
1813 BFP620FE7764 RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4 Infineon
1814 BFP640 Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA Infineon
1815 BFP650 Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA Infineon
1816 BFP740 Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package Infineon
1817 BFP740F Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package Infineon
1818 BFP90A NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
1819 BFP91A NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
1820 BFP96 NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
1821 BFQ193 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) Siemens
1822 BFQ19S RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz Infineon
1823 BFQ19S NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and) Siemens
1824 BFQ65 NPN microwave NPN transistor, designed for use in the GHz range, very low noise Philips
1825 BFR106 RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers Infineon
1826 BFR106 NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) Siemens
1827 BFR16 Transistor for low-level and low noise amplifiers SGS-ATES
1828 BFR17 Transistor for low-level and low noise amplifiers SGS-ATES
1829 BFR181 RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers Infineon
1830 BFR181 NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) Siemens


Datasheets found :: 9618
Page: | 57 | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 |



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