| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
1N5625GP |
Glass Passivated Junction Rectifiers, Forward Current 3.0A, Rev. Voltage 400V |
Vishay |
| 1802 |
1N5626 |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 1803 |
1N5626GP |
600 V, 3 A glass passivated junction rectifier |
Fagor |
| 1804 |
1N5626GP |
600 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
| 1805 |
1N5626GP |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 1806 |
1N5626GP |
Glass Passivated Junction Rectifiers, Forward Current 3.0A, Rev. Voltage 600V |
Vishay |
| 1807 |
1N5627 |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 1808 |
1N5627GP |
800 V, 3 A glass passivated junction rectifier |
Fagor |
| 1809 |
1N5627GP |
800 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
| 1810 |
1N5627GP |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 1811 |
1N5627GP |
Glass Passivated Junction Rectifiers, Forward Current 3.0A, Rev. Voltage 800V |
Vishay |
| 1812 |
1N5926B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1813 |
1N5926B |
11 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1814 |
1N5926B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1815 |
1N5927B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1816 |
1N5927B |
12 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1817 |
1N5927B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1818 |
1N5928B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1819 |
1N5928B |
13 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1820 |
1N5928B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1821 |
1N5929B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1822 |
1N5929B |
15 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1823 |
1N5929B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1824 |
1N5930B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1825 |
1N5930B |
16 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1826 |
1N5930B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1827 |
1N5931B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1828 |
1N5931B |
18 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1829 |
1N5931B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1830 |
1N5932B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
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