| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
BAW56M |
High-speed switching diodes |
NXP Semiconductors |
| 1802 |
BAW56QA |
Dual common anode high-speed switching diode |
Nexperia |
| 1803 |
BAW56S |
High-speed switching diodes |
Nexperia |
| 1804 |
BAW56S |
High-speed switching diodes |
NXP Semiconductors |
| 1805 |
BAW56S |
High-speed double diode array |
Philips |
| 1806 |
BAW56S |
Silicon Switching Diode Array (For high-speed switching applications Common anode) |
Siemens |
| 1807 |
BAW56SRA |
Quad high-speed switching diodes |
Nexperia |
| 1808 |
BAW56T |
High-speed switching diodes |
Nexperia |
| 1809 |
BAW56T |
High-speed switching diodes |
NXP Semiconductors |
| 1810 |
BAW56T |
High-speed double diode |
Philips |
| 1811 |
BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching |
Infineon |
| 1812 |
BAW56W |
High-speed switching diodes |
Nexperia |
| 1813 |
BAW56W |
High-speed switching diodes |
NXP Semiconductors |
| 1814 |
BAW56W |
High-speed double diode |
Philips |
| 1815 |
BAW62 |
High-speed diode |
Philips |
| 1816 |
BAW78A-BAW79D |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 1817 |
BAW79A |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 1818 |
BAW79B |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 1819 |
BAW79C |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 1820 |
BAW79D |
General Purpose Diodes - Silicon Switching Diode for high-speed switching |
Infineon |
| 1821 |
BAW79D |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 1822 |
BAX13 |
High-Speed silicon epitaxial switching diode |
Texas Instruments |
| 1823 |
BB1 |
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
NEC |
| 1824 |
BCM8021 |
4-Channel Multirate 1.0-3.2-Gbps Transceiver with High-Speed Redundancy |
Broadcom |
| 1825 |
BD135 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
| 1826 |
BD135-10 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
| 1827 |
BD135-16 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
| 1828 |
BD135-25 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
| 1829 |
BD135-4 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
| 1830 |
BD135-6 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
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