| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
STW20NM50 |
N-CHANNEL 500V 0.20 OHM 20A TO-247 MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 1802 |
STW20NM50 |
N-CHANNEL 500V - 0.20 OHM - 20A TO-247 MDMESH POWER MOSFET |
ST Microelectronics |
| 1803 |
STW21N65M5 |
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-247 |
ST Microelectronics |
| 1804 |
STW22N95K5 |
Automotive-grade N-channel 950 V, 0.280 Ohm typ., 17.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-247 package |
ST Microelectronics |
| 1805 |
STW23NM60ND |
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-247 |
ST Microelectronics |
| 1806 |
STW26NM50 |
N-CHANNEL 500V 0.10 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 1807 |
STW26NM50 |
N-CHANNEL 500V - 0.10 OHM - 26A TO-247 ZENER-PROTECTED MDMESH POWER MOSFET |
ST Microelectronics |
| 1808 |
STW28NM60ND |
N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package |
ST Microelectronics |
| 1809 |
STW40N20 |
N-CHANNEL 200V - 0.040 Ohm - 40A TO-220/TO-247 LOW GATE CHARGE STripFET MOSFET |
ST Microelectronics |
| 1810 |
STW42N65M5 |
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in TO-247 |
ST Microelectronics |
| 1811 |
STW9NC70Z |
N-CHANNEL 700V 0.90 OHM 7.5A TO-247 ZENER-PROTECTED POWERMESH III MOSFET |
SGS Thomson Microelectronics |
| 1812 |
STY34NK80Z |
N-CHANNEL 800V - 0.20 OHM - 28A MAX247 ZENER-PROTECTED SUPERMESH™POWER MOSFET |
ST Microelectronics |
| 1813 |
STY60NA20 |
N-CHANNEL 200V - 0.030 OHM - 60A - FAST POWER MOS TRANSISTOR |
ST Microelectronics |
| 1814 |
STY60NM60 |
N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 1815 |
STY60NM60 |
N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET |
ST Microelectronics |
| 1816 |
STY80NM60N |
N-channel 600 V, 0.030 Ohm, 74 A, MDmesh(TM) II Power MOSFET Max247 |
ST Microelectronics |
| 1817 |
SXL-189-EB |
800-1000 MHz, 50 Ohm power MMIC amplifier. High linearity performance: +42dBm typ. at 900 MHz. Eval board. |
Stanford Microdevices |
| 1818 |
SXL-208-BLK |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: +46dBm typ. at 900 MHz. Devices per reel 100/TRAY. |
Stanford Microdevices |
| 1819 |
SXL-208-TR1 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: +46dBm typ. at 900 MHz. Devices per reel 500. Reel size 7 |
Stanford Microdevices |
| 1820 |
SXL-208-TR2 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: +46dBm typ. at 900 MHz. Devices per reel 1000. Reel size 13 |
Stanford Microdevices |
| 1821 |
SXL-316-BLK |
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: +52dBm typ. at 850 MHz. Devices per reel 100/TRAY. |
Stanford Microdevices |
| 1822 |
SXL-316-TR2 |
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: +52dBm typ. at 850 MHz. Devices per reel 1000. Reel size 13 |
Stanford Microdevices |
| 1823 |
TA 22T |
Single Value Chip Resistor 20 x 20, 10 ohm to 1 meg |
Vishay |
| 1824 |
TGF2965-SM |
0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor |
Qorvo |
| 1825 |
TGF3020-SM |
4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor |
Qorvo |
| 1826 |
TS5A1066YEPR |
10 OHM SPST ANALOG SWITCH |
Texas Instruments |
| 1827 |
TS5A1066YZPR |
10 OHM SPST ANALOG SWITCH |
Texas Instruments |
| 1828 |
TZ400BD |
30 V, 80 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 1829 |
TZ402BD |
15 V, 80 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 1830 |
TZ403BD |
15 V, 60 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
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