| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
MN63Y3212N5 |
NFC Tag module |
Panasonic |
| 1802 |
MP60G-12N |
VOLTAGE REGULATOR MODULE FOR INTEL ADVANCED PROCESSORS |
Semtech |
| 1803 |
MSAER12N50A |
N Channel MOSFET |
Microsemi |
| 1804 |
MSAFR12N50A |
N Channel MOSFET |
Microsemi |
| 1805 |
MT4712N-UBL |
Visible Emitters |
Marktech Optoelectronics |
| 1806 |
MTD12N06EZL |
OBSOLETE - REPLACEMENT P/N# - NONE |
ON Semiconductor |
| 1807 |
MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1808 |
MTM12N05 |
N-CHANNEL TMOS POWER FET 12A 50V |
Motorola |
| 1809 |
MTM12N06 |
N-CHANNEL TMOS POWER FET 12A 60V |
Motorola |
| 1810 |
MTM12N08 |
N-CHANNEL TMOS POWER FET 12A 80V |
Motorola |
| 1811 |
MTM12N10 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 1812 |
MTM12N10 |
P-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
New Jersey Semiconductor |
| 1813 |
MTM12N10E |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 1814 |
MTP12N05 |
N-CHANNEL TMOS POWER FET 12A 50V |
Motorola |
| 1815 |
MTP12N05E |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 1816 |
MTP12N06 |
N-CHANNEL TMOS POWER FET 12A 60V |
Motorola |
| 1817 |
MTP12N06 |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM |
Motorola |
| 1818 |
MTP12N06EZL |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM |
Motorola |
| 1819 |
MTP12N06EZL |
OBSOLETE - N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1820 |
MTP12N06EZL-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1821 |
MTP12N08 |
N-CHANNEL TMOS POWER FET 12A 80V |
Motorola |
| 1822 |
MTP12N08L |
Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 1823 |
MTP12N10 |
N-CHANNEL TMOS POWER FET 12A 100V |
Motorola |
| 1824 |
MTP12N10E |
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM |
Motorola |
| 1825 |
MTP12N10E |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
| 1826 |
MTP12N10E |
OBSOLETE - 12 Amp TO-220AB, N-Channel, VDSS 100 |
ON Semiconductor |
| 1827 |
MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1828 |
MTP12N10L |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
| 1829 |
MTP12N18 |
N-Channel Power MOSFETs, 12A, 150-200 V |
Fairchild Semiconductor |
| 1830 |
MTP12N18 |
Trans MOSFET N-CH 180V 12A |
New Jersey Semiconductor |
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