| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
NTHD4508N |
Power MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™ |
ON Semiconductor |
| 1802 |
NTHD4508NT1 |
Power MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™ |
ON Semiconductor |
| 1803 |
NTHD4508NT1G |
Power MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™ |
ON Semiconductor |
| 1804 |
NTHD5904 |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1805 |
NTHD5904 |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1806 |
NTHD5904 |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1807 |
NTHD5904NT1 |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1808 |
NTHD5904NT1 |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1809 |
NTHD5904NT1 |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1810 |
NTHD5904NT1G |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1811 |
NTHD5904NT1G |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1812 |
NTHD5904NT1G |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1813 |
NTHD5904NT3 |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1814 |
NTHD5904NT3 |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1815 |
NTHD5904NT3 |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1816 |
NTHD5904NT3G |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1817 |
NTHD5904NT3G |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1818 |
NTHD5904NT3G |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 1819 |
NTHD5904T1-D |
Power MOSFET Dual N-Channel 3.1 Amps, 20 Volts |
ON Semiconductor |
| 1820 |
NX8560LJ525-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1552.52 nm. Frequency 193.10 THz. FC-UPC connector. |
NEC |
| 1821 |
NX8560LJ525-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1552.52 nm. Frequency 193.10 THz. SC-UPC connector. |
NEC |
| 1822 |
NX8560SJ521-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1552.122 nm. Frequency 193.15 THz. FC-UPC connector. |
NEC |
| 1823 |
NX8560SJ521-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1552.122 nm. Frequency 193.15 THz. SC-UPC connector. |
NEC |
| 1824 |
NX8560SJ525-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1552.524 nm. Frequency 193.10 THz. FC-UPC connector. |
NEC |
| 1825 |
NX8560SJ525-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1552.524 nm. Frequency 193.10 THz. SC-UPC connector. |
NEC |
| 1826 |
NX8562LB525-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1552.52 nm. Frequency 193.10 THz. Anode ground. FC-PC connector. |
NEC |
| 1827 |
NX8562LB6031-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1603.16 nm. Frequency 187.00 THz. Anode ground. FC-PC connector. |
NEC |
| 1828 |
NX8562LF525-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1552.52 nm. Frequency 193.10 THz. Anode floating. FC-PC connector. |
NEC |
| 1829 |
NX8562LF6031-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1603.16 nm. Frequency 187.00 THz. Anode floating. FC-PC connector. |
NEC |
| 1830 |
NX8563LA525-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1552.52 nm. Frequency 193.10 THz. SC-UPC. |
NEC |
| | | |
