| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
2SA2195 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 1802 |
2SA2214 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 1803 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 1804 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 1805 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 1806 |
2SA3331R |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1807 |
2SA3331S |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1808 |
2SA3331T |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1809 |
2SA3331U |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1810 |
2SA3331V |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1811 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 1812 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 1813 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 1814 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 1815 |
2SA473 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1816 |
2SA493-GR |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 1817 |
2SA493-Y |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 1818 |
2SA493G |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 1819 |
2SA494 |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 1820 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
| 1821 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1822 |
2SA497 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
| 1823 |
2SA498 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
| 1824 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1825 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1826 |
2SA532 |
Medium Power Amplifiers and Switches |
Micro Electronics |
| 1827 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 1828 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 1829 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 1830 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
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