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Datasheets for E AMPLIFIE

Datasheets found :: 7314
Page: | 57 | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 |
No. Part Name Description Manufacturer
1801 BF516 Epitaxial planar PNP transistor, intended as general purpose amplifier and oscillator up to 1GHz SGS-ATES
1802 BF657 Transistor for high voltage amplifiers SGS-ATES
1803 BF658 Transistor for high voltage amplifiers SGS-ATES
1804 BF659 Transistor for high voltage amplifiers SGS-ATES
1805 BF757 NPN silicon ANNULAR high-voltage amplifier transistor Motorola
1806 BF758 NPN silicon ANNULAR high-voltage amplifier transistor Motorola
1807 BF759 NPN silicon ANNULAR high-voltage amplifier transistor Motorola
1808 BF760 PNP silicon ANNULAR high-voltage amplifier transistor Motorola
1809 BF761 PNP silicon ANNULAR high-voltage amplifier transistor Motorola
1810 BF762 PNP silicon ANNULAR high-voltage amplifier transistor Motorola
1811 BF787 NPN silicon ANNULAR high-voltage amplifier transistor Low CRE Motorola
1812 BF788 NPN silicon ANNULAR high-voltage amplifier transistor Low CRE Motorola
1813 BF789 NPN silicon ANNULAR high-voltage amplifier transistor Low CRE Motorola
1814 BF790 PNP silicon ANNULAR high-voltage amplifier transistor Low CRE Motorola
1815 BF791 PNP silicon ANNULAR high-voltage amplifier transistor Low CRE Motorola
1816 BF792 PNP silicon ANNULAR high-voltage amplifier transistor Low CRE Motorola
1817 BFP420 NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) Siemens
1818 BFP520 NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) Siemens
1819 BFP81 NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) Siemens
1820 BFQ23 Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain Philips
1821 BFQ51C Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A Philips
1822 BFQ52 PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 Philips
1823 BFQ53 NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 Philips
1824 BFQ63 NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers Philips
1825 BFQ74 NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications) Siemens
1826 BFQ81 NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications) Siemens
1827 BFR16 Transistor for low-level and low noise amplifiers SGS-ATES
1828 BFR16 Transistor for general purpose amplifiers SGS-ATES
1829 BFR17 Transistor for low-level and low noise amplifiers SGS-ATES
1830 BFR17 Transistor for general purpose amplifiers SGS-ATES


Datasheets found :: 7314
Page: | 57 | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 |



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