No. |
Part Name |
Description |
Manufacturer |
1801 |
BF516 |
Epitaxial planar PNP transistor, intended as general purpose amplifier and oscillator up to 1GHz |
SGS-ATES |
1802 |
BF657 |
Transistor for high voltage amplifiers |
SGS-ATES |
1803 |
BF658 |
Transistor for high voltage amplifiers |
SGS-ATES |
1804 |
BF659 |
Transistor for high voltage amplifiers |
SGS-ATES |
1805 |
BF757 |
NPN silicon ANNULAR high-voltage amplifier transistor |
Motorola |
1806 |
BF758 |
NPN silicon ANNULAR high-voltage amplifier transistor |
Motorola |
1807 |
BF759 |
NPN silicon ANNULAR high-voltage amplifier transistor |
Motorola |
1808 |
BF760 |
PNP silicon ANNULAR high-voltage amplifier transistor |
Motorola |
1809 |
BF761 |
PNP silicon ANNULAR high-voltage amplifier transistor |
Motorola |
1810 |
BF762 |
PNP silicon ANNULAR high-voltage amplifier transistor |
Motorola |
1811 |
BF787 |
NPN silicon ANNULAR high-voltage amplifier transistor Low CRE |
Motorola |
1812 |
BF788 |
NPN silicon ANNULAR high-voltage amplifier transistor Low CRE |
Motorola |
1813 |
BF789 |
NPN silicon ANNULAR high-voltage amplifier transistor Low CRE |
Motorola |
1814 |
BF790 |
PNP silicon ANNULAR high-voltage amplifier transistor Low CRE |
Motorola |
1815 |
BF791 |
PNP silicon ANNULAR high-voltage amplifier transistor Low CRE |
Motorola |
1816 |
BF792 |
PNP silicon ANNULAR high-voltage amplifier transistor Low CRE |
Motorola |
1817 |
BFP420 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) |
Siemens |
1818 |
BFP520 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
1819 |
BFP81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
Siemens |
1820 |
BFQ23 |
Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain |
Philips |
1821 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
1822 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
1823 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
1824 |
BFQ63 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers |
Philips |
1825 |
BFQ74 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications) |
Siemens |
1826 |
BFQ81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications) |
Siemens |
1827 |
BFR16 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
1828 |
BFR16 |
Transistor for general purpose amplifiers |
SGS-ATES |
1829 |
BFR17 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
1830 |
BFR17 |
Transistor for general purpose amplifiers |
SGS-ATES |
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