No. |
Part Name |
Description |
Manufacturer |
1801 |
ASX200A09 |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tube packing. Coil rating 9 V DC. |
Matsushita Electric Works(Nais) |
1802 |
ASX200A09X |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tape and reel packing. Coil rating 9 V DC. |
Matsushita Electric Works(Nais) |
1803 |
ASX200A09Z |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tape and reel packing. Coil rating 9 V DC. |
Matsushita Electric Works(Nais) |
1804 |
ASX200A12 |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tube packing. Coil rating 12 V DC. |
Matsushita Electric Works(Nais) |
1805 |
ASX200A12X |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tape and reel packing. Coil rating 12 V DC. |
Matsushita Electric Works(Nais) |
1806 |
ASX200A12Z |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tape and reel packing. Coil rating 12 V DC. |
Matsushita Electric Works(Nais) |
1807 |
ASX200A1H |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tube packing. Coil rating 1.5 V DC. |
Matsushita Electric Works(Nais) |
1808 |
ASX200A1HX |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tape and reel packing. Coil rating 1.5 V DC. |
Matsushita Electric Works(Nais) |
1809 |
ASX200A1HZ |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tape and reel packing. Coil rating 1.5 V DC. |
Matsushita Electric Works(Nais) |
1810 |
ASX200A24 |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tube packing. Coil rating 24 V DC. |
Matsushita Electric Works(Nais) |
1811 |
ASX200A24X |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tape and reel packing. Coil rating 24 V DC. |
Matsushita Electric Works(Nais) |
1812 |
ASX200A24Z |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tape and reel packing. Coil rating 24 V DC. |
Matsushita Electric Works(Nais) |
1813 |
ASX200A4H |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tube packing. Coil rating 4.5 V DC. |
Matsushita Electric Works(Nais) |
1814 |
ASX200A4HX |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tape and reel packing. Coil rating 4.5 V DC. |
Matsushita Electric Works(Nais) |
1815 |
ASX200A4HZ |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. Single side stable. Tape and reel packing. Coil rating 4.5 V DC. |
Matsushita Electric Works(Nais) |
1816 |
AT-41400 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip |
Agilent (Hewlett-Packard) |
1817 |
AT-41400-GP4 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip |
Agilent (Hewlett-Packard) |
1818 |
AT-41410 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1819 |
AT-41411 |
Surface Mount Low Noise Silicon Bipolar Transistor Chip |
Agilent (Hewlett-Packard) |
1820 |
AT-41411-BLK |
Surface Mount Low Noise Silicon Bipolar Transistor Chip |
Agilent (Hewlett-Packard) |
1821 |
AT-41411-TR1 |
Surface Mount Low Noise Silicon Bipolar Transistor Chip |
Agilent (Hewlett-Packard) |
1822 |
AT-41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1823 |
AT-41470 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1824 |
AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1825 |
AT-41486 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1826 |
AT-41486-BLK |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1827 |
AT-41486-TR1 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1828 |
AT002S3-11 |
GaAs 35 dB IC Voltage Variable Single Control Attenuator 0.4�2.5 GHz |
Alpha Industries Inc |
1829 |
AT41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1830 |
AT41486 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
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