No. |
Part Name |
Description |
Manufacturer |
1801 |
2N779A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
1802 |
2N783 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1803 |
2N784A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1804 |
2N794 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
1805 |
2N795 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
1806 |
2N796 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
1807 |
2N827 |
PNP germanium mesa transistor for high-speed switching applications, TO-18 case |
Motorola |
1808 |
2N828 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
1809 |
2N828A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
1810 |
2N829 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
1811 |
2N834 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
1812 |
2N834 |
Transistor, high speed saturated switches |
SGS-ATES |
1813 |
2N834 |
Transistor, high speed saturated switches |
SGS-ATES |
1814 |
2N834A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1815 |
2N834A |
Transistor, high speed saturated switches |
SGS-ATES |
1816 |
2N834A |
Transistor, high speed saturated switches |
SGS-ATES |
1817 |
2N835 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
1818 |
2N835 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1819 |
2N838 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
1820 |
2N846A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
1821 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
1822 |
2N869A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1823 |
2N869A |
Transistor, high speed saturated switches |
SGS-ATES |
1824 |
2N869A |
Transistor, high speed saturated switches |
SGS-ATES |
1825 |
2N870 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1826 |
2N871 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1827 |
2N909 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1828 |
2N910 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1829 |
2N911 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1830 |
2N914 |
Silicon NPN epitaxial planar transistor for high speed switching |
AEG-TELEFUNKEN |
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