No. |
Part Name |
Description |
Manufacturer |
1801 |
IRF830 |
500 V,power field effect transistor |
TRANSYS Electronics Limited |
1802 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
1803 |
IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1804 |
IRF841 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1805 |
IRF842 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1806 |
IRF843 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1807 |
IRF9240SMD |
200V Vdss P-Channel FET (field effect transistor) |
SemeLAB |
1808 |
IRFD112 |
Power MOSFET field effect power transistor. |
General Electric Solid State |
1809 |
IRFD113 |
Power MOSFET field effect power transistor. |
General Electric Solid State |
1810 |
IRFD213 |
(IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage |
Motorola |
1811 |
IRFE230 |
200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
1812 |
IRFF110 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
1813 |
IRFF113 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
1814 |
IRFF310 |
Power MOSFET field effect power transistor. Drain-source voltage 400 V. |
General Electric Solid State |
1815 |
IRFF311 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
1816 |
IRFF312 |
Power MOSFET field effect power transistor. Drain-source voltage 400 V. |
General Electric Solid State |
1817 |
IRFF313 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
1818 |
IRFM250D |
200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
1819 |
IRFR220 |
N-channel enhancement mode field effect transistor |
Philips |
1820 |
IRFR9024 |
P-Channel Enhancement Mode Field Effect Transistor [Obsolete] |
Fairchild Semiconductor |
1821 |
IRFY240C |
200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
1822 |
IRFZ42 |
Power Field Effect Transistors |
Motorola |
1823 |
J111 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
1824 |
J112 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
1825 |
J113 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
1826 |
J2N3823 |
N channel field effect transistor (chips) |
SESCOSEM |
1827 |
J2N3966 |
N channel field effect transistor (chips) |
SESCOSEM |
1828 |
J2N4091 |
N channel field effect transistor (chips) |
SESCOSEM |
1829 |
J2N4092 |
N channel field effect transistor (chips) |
SESCOSEM |
1830 |
J2N4093 |
N channel field effect transistor (chips) |
SESCOSEM |
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