No. |
Part Name |
Description |
Manufacturer |
1801 |
LXHL-PD09 |
Combining the lifetime and reliability Advantages of Light Emitting Diodes with the Brightness of conventional lighting. |
etc |
1802 |
LXHL-PE09 |
Combining the lifetime and reliability Advantages of Light Emitting Diodes with the Brightness of conventional lighting. |
etc |
1803 |
LXHL-PH09 |
Combining the lifetime and reliability Advantages of Light Emitting Diodes with the Brightness of conventional lighting. |
etc |
1804 |
LXHL-PL09 |
Combining the lifetime and reliability Advantages of Light Emitting Diodes with the Brightness of conventional lighting. |
etc |
1805 |
LXHL-PM09 |
Combining the lifetime and reliability Advantages of Light Emitting Diodes with the Brightness of conventional lighting. |
etc |
1806 |
LXHL-PR09 |
Combining the lifetime and reliability Advantages of Light Emitting Diodes with the Brightness of conventional lighting. |
etc |
1807 |
LXHL-PW09 |
Combining the lifetime and reliability Advantages of Light Emitting Diodes with the Brightness of conventional lighting. |
etc |
1808 |
LYS250-DO |
LIGHT EMITTING DIODES |
Siemens |
1809 |
MCA230 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. |
General Electric Solid State |
1810 |
MCA231 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. |
General Electric Solid State |
1811 |
MCA235 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. |
General Electric Solid State |
1812 |
MCS2 |
PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE AND LIGHT ACTIVATED SCR |
ISOCOM |
1813 |
MCS2400 |
Photon coupled isolator. GaAs infrared emitting diode & light activated SCR. |
General Electric Solid State |
1814 |
MCS2400 |
PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE AND LIGHT ACTIVATED SCR |
ISOCOM |
1815 |
MCS2400X |
PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE AND LIGHT ACTIVATED SCR |
ISOCOM |
1816 |
MCT210 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-transistor. |
General Electric Solid State |
1817 |
ME7022 |
120 mA, 2 V, InGaAsP light emitting diode for optical communication |
Mitsubishi Electric Corporation |
1818 |
ME7032 |
120 mA, 2 V, InGaAsP light emitting diode for optical communication |
Mitsubishi Electric Corporation |
1819 |
ME7522 |
120 mA, 2 V, InGaAsP light emitting diode for optical communication |
Mitsubishi Electric Corporation |
1820 |
MI31T |
INFRARED EMITTING DIODE |
Micro Electronics |
1821 |
MI31TA |
INFRARED EMITTING DIODE |
Micro Electronics |
1822 |
MI32T |
INFRARED EMITTING DIODE |
Micro Electronics |
1823 |
MI32T-L |
INFRARED EMITTING DIODE |
Micro Electronics |
1824 |
MI32TA |
INFRARED EMITTING DIODE |
Micro Electronics |
1825 |
MI33T |
INFRARED EMITTING DIODE |
Micro Electronics |
1826 |
MI38T |
INFRARED EMITTING DIODE |
Micro Electronics |
1827 |
MI51T |
INFRARED EMITTING DIODE |
Micro Electronics |
1828 |
MI51TA |
INFRARED EMITTING DIODE |
Micro Electronics |
1829 |
MI51TA-2 |
INFRARED EMITTING DIODE |
Micro Electronics |
1830 |
MI51TA-3 |
INFRARED EMITTING DIODE |
Micro Electronics |
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