| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
1N5954B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1802 |
1N5955B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1803 |
1N5956B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1804 |
1N60 |
Germanium Glass Diodes |
International Semiconductor |
| 1805 |
1N6095 |
V(rwm): 30V; 27.5A dual schottky power rectifier |
International Rectifier |
| 1806 |
1N6096 |
V(rwm): 40V; 27.5A dual schottky power rectifier |
International Rectifier |
| 1807 |
1N6097 |
30V 50A Schottky Discrete Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 1808 |
1N6098 |
40V 50A Schottky Discrete Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 1809 |
1N6099 |
HIGH CONDUCTANCE LOW LEAKAGE DIODES |
BKC International Electronics |
| 1810 |
1N616 |
20 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1811 |
1N617 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1812 |
1N618 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1813 |
1N625 |
20 V, 500 mW general purpose diode |
BKC International Electronics |
| 1814 |
1N626 |
35 V, 500 mW general purpose diode |
BKC International Electronics |
| 1815 |
1N6263 |
60 V, 400 mW silicon schottky barrier diode |
BKC International Electronics |
| 1816 |
1N627 |
75 V, 500 mW general purpose diode |
BKC International Electronics |
| 1817 |
1N628 |
125 V, 500 mW general purpose diode |
BKC International Electronics |
| 1818 |
1N629 |
175 V, 500 mW general purpose diode |
BKC International Electronics |
| 1819 |
1N631 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1820 |
1N632 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1821 |
1N633 |
120 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1822 |
1N634 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1823 |
1N635 |
165 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1824 |
1N636 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1825 |
1N6392 |
45V 60A Schottky Discrete Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 1826 |
1N658 |
100 V, 500 mW general purpose diode |
BKC International Electronics |
| 1827 |
1N659 |
50 V, 500 mW general purpose diode |
BKC International Electronics |
| 1828 |
1N660 |
100 V, 500 mW general purpose diode |
BKC International Electronics |
| 1829 |
1N661 |
200 V, 500 mW general purpose diode |
BKC International Electronics |
| 1830 |
1N695 |
20 V, 500 mA, gold bonded diode |
BKC International Electronics |
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