| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
240U80D |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1802 |
240U80DR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1803 |
250UC11 |
Silicon alloy-diffused junction high-current rectifier 1600V 250A |
TOSHIBA |
| 1804 |
2530 |
High Speed 512 x 8 Static Read-only Memory |
Signetics |
| 1805 |
2530I |
High Speed 512 x 8 Static Read-only Memory |
Signetics |
| 1806 |
2530N |
High Speed 512 x 8 Static Read-only Memory |
Signetics |
| 1807 |
25F10 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1808 |
25F100 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1809 |
25F100R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1810 |
25F10R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1811 |
25F120 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1812 |
25F120R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1813 |
25F20 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1814 |
25F20R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1815 |
25F40 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1816 |
25F40R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1817 |
25F60 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1818 |
25F60R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1819 |
25F80 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1820 |
25F80R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1821 |
26CV12 |
HighPerformanceE2CMOSPLDGenericArrayLogic |
Lattice Semiconductor |
| 1822 |
26LS31 |
QuadHighSpeedDifferentialLineDriver |
National Semiconductor |
| 1823 |
277 |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
| 1824 |
277A |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
| 1825 |
277J |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
| 1826 |
277K |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
| 1827 |
27C010 |
1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 1828 |
27C040 |
4 /194 /304-Bit 512K x 8 High Performance CMOS EPROM |
Fairchild Semiconductor |
| 1829 |
27E040T-12 |
512K*8 bits high speed, low power electrically erasable EPROM |
Winbond Electronics |
| 1830 |
27H010 |
128K x 8 High-Speed CMOS EPROM |
Cypress |
| | | |
