| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1802 |
CM900HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1803 |
CR02 |
LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1804 |
CR02AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1805 |
CR02AM-4 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1806 |
CR02AM-6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1807 |
CR02AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1808 |
CR02AM-8A |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1809 |
CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1810 |
CR03AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1811 |
CR03AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1812 |
CR04 |
LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1813 |
CR04AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1814 |
CR04AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1815 |
CR04AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1816 |
CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1817 |
CR05AS-4 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1818 |
CR05AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1819 |
CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1820 |
CR08AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1821 |
CR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1822 |
CR10C |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1823 |
CR10CY |
HIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1824 |
CR12AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1825 |
CR12AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1826 |
CR12AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1827 |
CR12BM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1828 |
CR20EY |
HIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1829 |
CR20F |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1830 |
CR2AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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