| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
BFR91 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 1802 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 1803 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 1804 |
BFR96 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 1805 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
| 1806 |
BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) |
Siemens |
| 1807 |
BFY181 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 1808 |
BFY182 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 1809 |
BFY183 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 1810 |
BFY193 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) |
Siemens |
| 1811 |
BFY196 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) |
Siemens |
| 1812 |
BFY280 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 1813 |
BFY90 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 1814 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1815 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1816 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1817 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1818 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1819 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1820 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1821 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1822 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1823 |
BGY14E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1824 |
BGY14FA1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1825 |
BGY26D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1826 |
BGY26E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1827 |
BGY26FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1828 |
BGY27DA-1D |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1829 |
BGY27DB-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1830 |
BGY27E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
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