| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
NT128S64VH8C0GM-75B |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
| 1802 |
NT128S64VH8C0GM-7K |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
| 1803 |
NT128S64VH8C0GM-8B |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
| 1804 |
NT256D64S88A2GM-75B |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM |
NANYA |
| 1805 |
NT256D64S88A2GM-7K |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM |
NANYA |
| 1806 |
NT256D64S88A2GM-8B |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM |
NANYA |
| 1807 |
OZ998 |
Intelligent Manager Smart Multi-DIMM Selector |
etc |
| 1808 |
OZ998S |
Intelligent Manager Smart Multi-DIMM Selector |
etc |
| 1809 |
OZ998S |
Intelligent manager smart multi-DIMM selector |
O2Micro |
| 1810 |
P13B16212A |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
| 1811 |
P13B16212V |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
| 1812 |
PC133 |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
| 1813 |
SSTU32864EC |
1.8 V configurable registered buffer for DDR2 RDIMM applications |
NXP Semiconductors |
| 1814 |
SSTU32864EC |
1.8 V configurable registered buffer for DDR2 RDIMM applications |
Philips |
| 1815 |
SSTU32864EC |
SSTU32864; 1.8 V configurable registered buffer for DDR2 RDIMM applications |
Philips |
| 1816 |
SSTU32864EC/G |
SSTU32864; 1.8 V configurable registered buffer for DDR2 RDIMM applications |
Philips |
| 1817 |
SSTU32864EC/G |
1.8 V configurable registered buffer for DDR2 RDIMM applications |
Philips |
| 1818 |
SSTU32865ET |
1.8 V 28-bit 1:2 registered buffer with parity for DDR2 RDIMM applications |
NXP Semiconductors |
| 1819 |
SSTU32865ET |
SSTU32865; 1.8 V 28-bit 1:2 registered buffer with parity for DDR2 RDIMM applications |
Philips |
| 1820 |
SSTU32865ET |
1.8 V 28-bit 1:2 registered buffer with parity for DDR2 RDIMM applications |
Philips |
| 1821 |
SSTU32865ET/G |
1.8 V 28-bit 1:2 registered buffer with parity for DDR2 RDIMM applications |
Philips |
| 1822 |
SSTU32865ET/G |
SSTU32865; 1.8 V 28-bit 1:2 registered buffer with parity for DDR2 RDIMM applications |
Philips |
| 1823 |
SSTU32866EC |
SSTU32866; 1.8 V 25-bit 1:1 or 14-bit 1:2 configurable registered buffer with parity for DDR2 RDIMM applications |
Philips |
| 1824 |
SSTU32866EC |
1.8 V 25-bit 1:1 or 14-bit 1:2 configurable registered buffer with parity for DDR2 RDIMM applications |
Philips |
| 1825 |
SSTU32866EC/G |
SSTU32866; 1.8 V 25-bit 1:1 or 14-bit 1:2 configurable registered buffer with parity for DDR2 RDIMM applications |
Philips |
| 1826 |
SSTU32866EC/G |
1.8 V 25-bit 1:1 or 14-bit 1:2 configurable registered buffer with parity for DDR2 RDIMM applications |
Philips |
| 1827 |
SSTUB32864EC |
1.8 V configurable registered buffer for DDR2-800 RDIMM applications |
NXP Semiconductors |
| 1828 |
SSTUB32866EC |
1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-800 RDIMM applications |
NXP Semiconductors |
| 1829 |
SSTUB32868ET |
1.8 V 28-bit 1 : 2 configurable registered buffer with parity for DDR2-800 RDIMM applications |
NXP Semiconductors |
| 1830 |
SSTUH32864EC |
1.8 V high output drive configurable registered buffer for DDR2 RDIMM applications |
Philips |
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