| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
1S282 |
Silicon junction zener diode 10W 30V |
TOSHIBA |
| 1802 |
1S283 |
Silicon junction zener diode 10W 33V |
TOSHIBA |
| 1803 |
1S284 |
Silicon junction zener diode 10W 36V |
TOSHIBA |
| 1804 |
1S285 |
Silicon junction zener diode 10W 39V |
TOSHIBA |
| 1805 |
1S286 |
Silicon junction zener diode 10W 43V |
TOSHIBA |
| 1806 |
1S287 |
Silicon junction zener diode 10W 45V |
TOSHIBA |
| 1807 |
1S288 |
Silicon junction zener diode 10W 47V |
TOSHIBA |
| 1808 |
1S289 |
Silicon junction zener diode 10W 50V |
TOSHIBA |
| 1809 |
1S290 |
Silicon junction zener diode 10W 52V |
TOSHIBA |
| 1810 |
1S291 |
Silicon junction zener diode 10W 56V |
TOSHIBA |
| 1811 |
1S292 |
Silicon junction zener diode 10W 62V |
TOSHIBA |
| 1812 |
1S293 |
Silicon junction zener diode 10W 68V |
TOSHIBA |
| 1813 |
1S294 |
Silicon junction zener diode 10W 75V |
TOSHIBA |
| 1814 |
1S295 |
Silicon junction zener diode 10W 82V |
TOSHIBA |
| 1815 |
1S296 |
Silicon junction zener diode 10W 91V |
TOSHIBA |
| 1816 |
1S297 |
Silicon junction zener diode 10W 100V |
TOSHIBA |
| 1817 |
1S298 |
Silicon junction zener diode 10W 105V |
TOSHIBA |
| 1818 |
1S299 |
Silicon junction zener diode 10W 110V |
TOSHIBA |
| 1819 |
1S300 |
Silicon junction zener diode 10W 120V |
TOSHIBA |
| 1820 |
1S301 |
Silicon junction zener diode 10W 130V |
TOSHIBA |
| 1821 |
1S302 |
Silicon junction zener diode 10W 140V |
TOSHIBA |
| 1822 |
1S303 |
Silicon junction zener diode 10W 150V |
TOSHIBA |
| 1823 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1824 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1825 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1826 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1827 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1828 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1829 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1830 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
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