| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
BDX65A |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 1802 |
BDX65B |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 1803 |
BDX65C |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 1804 |
BDX66 |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 1805 |
BDX66A |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 1806 |
BDX66B |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 1807 |
BDX66C |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 1808 |
BDX67 |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 1809 |
BDX67A |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 1810 |
BDX67B |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 1811 |
BDX67C |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 1812 |
BDY80 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BDY82 |
SESCOSEM |
| 1813 |
BDY81 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BDY83 |
SESCOSEM |
| 1814 |
BDY82 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY80 |
SESCOSEM |
| 1815 |
BDY83 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY81 |
SESCOSEM |
| 1816 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
| 1817 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
| 1818 |
BF471 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF472 |
Continental Device India Limited |
| 1819 |
BF472 |
2.000W Medium Power PNP Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF471 |
Continental Device India Limited |
| 1820 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 1821 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
| 1822 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 1823 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 1824 |
BROCHURE |
Signal Acquisition - Instrumentation Amplifier Brochure |
Burr Brown |
| 1825 |
BSO612CV |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.12/0.30Ohm, Id(N) = 3.1A, Id(P) = -2.0A, NL |
Infineon |
| 1826 |
BSO615C |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.11/0.30Ohm, Id(N) = 3.2A, Id(P) = -2.0A, LL |
Infineon |
| 1827 |
BSS8402DW-13-F |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
| 1828 |
BSS8402DW-7 |
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 1829 |
BSS8402DW-7-F |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
| 1830 |
BSS8402DWK |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
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