| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
NTE6365 |
Silicon Power Rectifier Diode, 300 Amp |
NTE Electronics |
| 1802 |
NTGD3147F |
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 |
ON Semiconductor |
| 1803 |
NTHD3101F |
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET¿ |
ON Semiconductor |
| 1804 |
NTHD3133PF |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 1805 |
NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 1806 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 1807 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 1808 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 1809 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 1810 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 1811 |
NTLJD3182FZ |
Power MOSFET and Schottky Diode, −20 V, −4.0 A, uCool¿, Single P−Channel & Schottky Barrier Diode, ESD |
ON Semiconductor |
| 1812 |
NTLJF1103P |
Power MOSFET and Schottky Diode -8 V, -4.3 A, µCool¿ P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN |
ON Semiconductor |
| 1813 |
RA0320R |
20A 30V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1814 |
RA0520R |
20A 50V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1815 |
RA120R |
20A 100V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1816 |
RA220R |
20A 200V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1817 |
RB160L-40 |
Schottky barrier diode, 40V, 1A |
ROHM |
| 1818 |
RB160L-60 |
Schottky barrier diode, 60V, 1A |
ROHM |
| 1819 |
RD100EB |
0.5W DHD zener diode, 100V |
NEC |
| 1820 |
RD10JB |
400mW Zener Diode, low noise, Sharp Breakdown caracteristics, DHD |
NEC |
| 1821 |
RD110EB |
0.5W DHD zener diode, 110V |
NEC |
| 1822 |
RD11JB |
400mW Zener Diode, low noise, Sharp Breakdown caracteristics, DHD |
NEC |
| 1823 |
RD120EB |
0.5W DHD zener diode, 120V |
NEC |
| 1824 |
RD12JB |
400mW Zener Diode, low noise, Sharp Breakdown caracteristics, DHD |
NEC |
| 1825 |
RD130EB |
0.5W DHD zener diode, 130V |
NEC |
| 1826 |
RD13JB |
400mW Zener Diode, low noise, Sharp Breakdown caracteristics, DHD |
NEC |
| 1827 |
RD140EB |
0.5W DHD zener diode, 140V |
NEC |
| 1828 |
RD150EB |
0.5W DHD zener diode, 150V |
NEC |
| 1829 |
RD15JB |
400mW Zener Diode, low noise, Sharp Breakdown caracteristics, DHD |
NEC |
| 1830 |
RD160EB |
0.5W DHD zener diode, 160V |
NEC |
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