| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
MFE2009 |
Silicon N-Channel depletion mode (Type A) junction field-effect transistor designed for chopper applications |
Motorola |
| 1802 |
MFE2010 |
Silicon N-channel depletion mode (Type A) junction field-effect transistor designed for chopper applications |
Motorola |
| 1803 |
MFE2011 |
Silicon N-channel depletion mode (Type A) junction field-effect transistor designed for chopper applications |
Motorola |
| 1804 |
MFE2012 |
Silicon N-channel depletion mode (Type A) junction field-effect transistor designed for chopper applications |
Motorola |
| 1805 |
MFE3006 |
N-channel dual-gate silicon-nitride passivated MOS field-effect transistor, depletion mode (Type B) |
Motorola |
| 1806 |
MFE4007 |
P-channel junction field-effect transistor, depletion mode (Type A) |
Motorola |
| 1807 |
MFE4008 |
P-channel junction field-effect transistor, depletion mode (Type A) |
Motorola |
| 1808 |
MFE4009 |
P-channel junction field-effect transistor, depletion mode (Type A) |
Motorola |
| 1809 |
MFE4010 |
P-channel junction field-effect transistor, depletion mode (Type A) |
Motorola |
| 1810 |
MFE4011 |
P-channel junction field-effect transistor, depletion mode (Type A) |
Motorola |
| 1811 |
MFE4012 |
P-channel junction field-effect transistor, depletion mode (Type A) |
Motorola |
| 1812 |
MICRORAM |
Output Ripple Attenuation Module |
Vicor Corporation |
| 1813 |
MJE16204-D |
SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors POWER TRANSISTORS 6A 45 and 80 Watts 550 Volts |
ON Semiconductor |
| 1814 |
MJL16218-D |
SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors |
ON Semiconductor |
| 1815 |
MJW16212-D |
SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors POWER TRANSISTOR |
ON Semiconductor |
| 1816 |
MM1097XF |
Low saturation motor driver |
Mitsumi Electric |
| 1817 |
MPF161 |
P-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 1818 |
MSM5000 |
Mobile Station Modem |
QUALCOMM Incorporated |
| 1819 |
MSM5105 |
MOBILE STATION MODEM, 3G CDMA Enabling Chipset (Pin compatible with the MSM3100 in a 208 FBGA package) |
QUALCOMM Incorporated |
| 1820 |
MSM5500 |
Mobile Station Modem |
QUALCOMM Incorporated |
| 1821 |
MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1822 |
MTD6N10 |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
Motorola |
| 1823 |
MTW54N05E |
High Energy in the Avalanche and Commutation modes |
Motorola |
| 1824 |
MUR10120E-D |
SCANSWITCH Power Rectifier For High and Very High Resolution Monitors |
ON Semiconductor |
| 1825 |
MUR10150E-D |
SCANSWITCH Power Rectifier For Use As A Damper Diode In High and Very High Resolution Monitors |
ON Semiconductor |
| 1826 |
MUR5150E-D |
SCANSWITCH Power Rectifier For Use As A Damper Diode In High and Very High Resolution Monitors |
ON Semiconductor |
| 1827 |
MV1405 |
Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode |
Advanced Semiconductor |
| 1828 |
N4690B |
N4690B 2-port MW Electronic Calibration Module, Type-N |
Agilent (Hewlett-Packard) |
| 1829 |
N4691B |
N4691B 2-port MW Electronic Calibration Module, 3.5 mm |
Agilent (Hewlett-Packard) |
| 1830 |
N4696B |
N4696B 2-port MW Electronic Calibration Module, 7 mm |
Agilent (Hewlett-Packard) |
| | | |
