No. |
Part Name |
Description |
Manufacturer |
181 |
AH174-PL-A |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection |
Anachip |
182 |
AH174-PL-B |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection |
Anachip |
183 |
AH174-PLA |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection |
Anachip |
184 |
AH174-PLA-A |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection |
Anachip |
185 |
AH174-PLA-B |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection |
Anachip |
186 |
AH174-PLB |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection |
Anachip |
187 |
AH174-W-A |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection |
Anachip |
188 |
AH174-W-B |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection |
Anachip |
189 |
AH174-WL-A |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection |
Anachip |
190 |
AH174-WL-B |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection |
Anachip |
191 |
AH174-WLA-A |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection |
Anachip |
192 |
AH174-WLA-B |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection |
Anachip |
193 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
194 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
195 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
196 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
197 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
198 |
AT22V10-20DM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
199 |
AT22V10-20GM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
200 |
AT22V10-20LM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
201 |
AT22V10-20NM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
202 |
AT22V10-25DM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
203 |
AT22V10-25GM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
204 |
AT22V10-25LM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
205 |
AT22V10-25NM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
206 |
DP8420A |
microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Driver(s) |
National Semiconductor |
207 |
DP8421A |
microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Driver(s) |
National Semiconductor |
208 |
DP8421ATV-25 |
microCMOS Programmable 1M Dynamic RAM Controller/Driver(s) |
National Semiconductor |
209 |
DP8421ATVX-25 |
microCMOS Programmable 1M Dynamic RAM Controller/Driver(s) [Life-time buy] |
National Semiconductor |
210 |
DP8421AV-20 |
microCMOS Programmable 1M Dynamic RAM Controller/Driver(s) [Life-time buy] |
National Semiconductor |
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