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Datasheets for (S)

Datasheets found :: 311
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 AH174-PL-A V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection Anachip
182 AH174-PL-B V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection Anachip
183 AH174-PLA V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection Anachip
184 AH174-PLA-A V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection Anachip
185 AH174-PLA-B V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection Anachip
186 AH174-PLB V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection Anachip
187 AH174-W-A V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection Anachip
188 AH174-W-B V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection Anachip
189 AH174-WL-A V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection Anachip
190 AH174-WL-B V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection Anachip
191 AH174-WLA-A V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection Anachip
192 AH174-WLA-B V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection Anachip
193 AT22V10-15DM_883 t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
194 AT22V10-15GM_883 t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
195 AT22V10-15JM_883 t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
196 AT22V10-15LM_883 t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
197 AT22V10-15NM_883 t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
198 AT22V10-20DM_883 t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
199 AT22V10-20GM_883 t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
200 AT22V10-20LM_883 t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
201 AT22V10-20NM_883 t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
202 AT22V10-25DM_883 t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
203 AT22V10-25GM_883 t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
204 AT22V10-25LM_833 t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
205 AT22V10-25NM_833 t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device Atmel
206 DP8420A microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Driver(s) National Semiconductor
207 DP8421A microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Driver(s) National Semiconductor
208 DP8421ATV-25 microCMOS Programmable 1M Dynamic RAM Controller/Driver(s) National Semiconductor
209 DP8421ATVX-25 microCMOS Programmable 1M Dynamic RAM Controller/Driver(s) [Life-time buy] National Semiconductor
210 DP8421AV-20 microCMOS Programmable 1M Dynamic RAM Controller/Driver(s) [Life-time buy] National Semiconductor


Datasheets found :: 311
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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