| No. |
Part Name |
Description |
Manufacturer |
| 181 |
A4558 |
Low Noise Dual OP AMP (The A4558 is a monolithic Integrated Circuit designed for dual operational amplifier.) |
AUK Corp |
| 182 |
BSM100GT120DN2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 183 |
BTS630 |
PWM Power Unit (The device allows continuous power control for lamps,LEDs or inductive loads.) |
Siemens |
| 184 |
BTS730 |
PWM Power Unit (The device allows continuous power control for lamps,LEDs or inductive loads.) |
Siemens |
| 185 |
CCS050M12CM2 |
1.2-kV, 50-A, Silicon Carbide, 45-mm, Six-Pack (Three-Phase) Module |
Wolfspeed |
| 186 |
CR02AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 187 |
CR02AM-8A |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 188 |
CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 189 |
CR04AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 190 |
CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 191 |
CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 192 |
CR12AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 193 |
CR12BM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 194 |
CR20F |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 195 |
CR2AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 196 |
CR3EM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 197 |
CR3PM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 198 |
CR5AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 199 |
CR6CM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 200 |
CR6PM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 201 |
CR8AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 202 |
CR8PM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 203 |
D10LC20U |
Super Fast Recovery Rectifiers / Center Tap, Common Cathode (Three Terminal Type) |
Shindengen |
| 204 |
D10LC2UR |
Super Fast Recovery Rectifiers / Center Tap, Common Anode (Three Terminal Type) |
Shindengen |
| 205 |
D10LC40 |
Super Fast Recovery Rectifiers / Center Tap, Common Cathode (Three Terminal Type) |
Shindengen |
| 206 |
D10SC4M |
Schottky Rectifiers (SBD) / Center Tap, Common Cathode (Three Terminal Type) |
Shindengen |
| 207 |
D10SC4MR |
Schottky Rectifiers (SBD) / Center Tap, Common Anode (Three Terminal Type) |
Shindengen |
| 208 |
D10SC6M |
Schottky Rectifiers (SBD) / Center Tap, Common Cathode (Three Terminal Type) |
Shindengen |
| 209 |
D10SC6MR |
Schottky Rectifiers (SBD) / Center Tap, Common Anode (Three Terminal Type) |
Shindengen |
| 210 |
D10SC9M |
Schottky Rectifiers (SBD) / Center Tap, Common Cathode (Three Terminal Type) |
Shindengen |
| | | |
