No. |
Part Name |
Description |
Manufacturer |
181 |
HCF40106BM1 |
HEX SCHMITT TRIGGERS |
ST Microelectronics |
182 |
HCF40106M013TR |
HEX SCHMITT TRIGGERS |
ST Microelectronics |
183 |
HCF4041UBEY |
QUAD TRUE/COMPLEMENT BUFFER |
ST Microelectronics |
184 |
HCF4041UBM1 |
QUAD TRUE/COMPLEMENT BUFFER |
ST Microelectronics |
185 |
HCF4041UM013TR |
QUAD TRUE/COMPLEMENT BUFFER |
ST Microelectronics |
186 |
ICS85322I |
Dual, LVCMOS / LVTTL-to-Differential 2.5V / 3.3V LVPECL Translator |
Texas Instruments |
187 |
ICS85322I |
Dual, LVCMOS / LVTTL-to-Differential 2.5V / 3.3V LVPECL Translator |
Texas Instruments |
188 |
IRGP4072D |
300V UltraFast Copack Trench IGBT in a TO-247AC package |
International Rectifier |
189 |
IRGP4072DPBF |
300V UltraFast Copack Trench IGBT in a TO-247AC package |
International Rectifier |
190 |
ITA10B1 |
BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) |
ST Microelectronics |
191 |
ITA18B1 |
BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) |
ST Microelectronics |
192 |
ITA18B3 |
BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) |
ST Microelectronics |
193 |
ITA25B1 |
BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) |
ST Microelectronics |
194 |
ITA25B3 |
BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) |
ST Microelectronics |
195 |
ITA6V5B1 |
BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) |
ST Microelectronics |
196 |
ITA6V5B3 |
BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) |
ST Microelectronics |
197 |
KSA1010 |
-100 V, -15 A, PNP epitaxial silicon transistor |
Samsung Electronic |
198 |
KSA1220 |
-120 V, -1.2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
199 |
KSA1220A |
-120 V, -1.2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
200 |
KSA614 |
-80 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
201 |
KSA634 |
-40 V, -2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
202 |
KSA940 |
-150 V, -1.5 A, PNP epitaxial silicon transistor |
Samsung Electronic |
203 |
KSB596 |
-80 V, -4 A, PNP epitaxial silicon transistor |
Samsung Electronic |
204 |
KSC1096 |
40 V, 2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
205 |
KSC1173 |
30 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
206 |
KSC1507 |
300 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
207 |
KSC1520A |
300 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
208 |
KSC1983 |
80 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
209 |
KSC2233 |
200 V, 4 A, NPN epitaxial silicon transistor |
Samsung Electronic |
210 |
KSC2333 |
500 V, 2 A, NPN epitaxial silicon transistor |
Samsung Electronic |
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