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Datasheets for TR

Datasheets found :: 665
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No. Part Name Description Manufacturer
181 HCF40106BM1 HEX SCHMITT TRIGGERS ST Microelectronics
182 HCF40106M013TR HEX SCHMITT TRIGGERS ST Microelectronics
183 HCF4041UBEY QUAD TRUE/COMPLEMENT BUFFER ST Microelectronics
184 HCF4041UBM1 QUAD TRUE/COMPLEMENT BUFFER ST Microelectronics
185 HCF4041UM013TR QUAD TRUE/COMPLEMENT BUFFER ST Microelectronics
186 ICS85322I Dual, LVCMOS / LVTTL-to-Differential 2.5V / 3.3V LVPECL Translator Texas Instruments
187 ICS85322I Dual, LVCMOS / LVTTL-to-Differential 2.5V / 3.3V LVPECL Translator Texas Instruments
188 IRGP4072D 300V UltraFast Copack Trench IGBT in a TO-247AC package International Rectifier
189 IRGP4072DPBF 300V UltraFast Copack Trench IGBT in a TO-247AC package International Rectifier
190 ITA10B1 BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) ST Microelectronics
191 ITA18B1 BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) ST Microelectronics
192 ITA18B3 BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) ST Microelectronics
193 ITA25B1 BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) ST Microelectronics
194 ITA25B3 BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) ST Microelectronics
195 ITA6V5B1 BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) ST Microelectronics
196 ITA6V5B3 BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION - (ASD) ST Microelectronics
197 KSA1010 -100 V, -15 A, PNP epitaxial silicon transistor Samsung Electronic
198 KSA1220 -120 V, -1.2 A, PNP epitaxial silicon transistor Samsung Electronic
199 KSA1220A -120 V, -1.2 A, PNP epitaxial silicon transistor Samsung Electronic
200 KSA614 -80 V, -3 A, PNP epitaxial silicon transistor Samsung Electronic
201 KSA634 -40 V, -2 A, PNP epitaxial silicon transistor Samsung Electronic
202 KSA940 -150 V, -1.5 A, PNP epitaxial silicon transistor Samsung Electronic
203 KSB596 -80 V, -4 A, PNP epitaxial silicon transistor Samsung Electronic
204 KSC1096 40 V, 2 A, PNP epitaxial silicon transistor Samsung Electronic
205 KSC1173 30 V, 3 A, NPN epitaxial silicon transistor Samsung Electronic
206 KSC1507 300 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
207 KSC1520A 300 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
208 KSC1983 80 V, 3 A, NPN epitaxial silicon transistor Samsung Electronic
209 KSC2233 200 V, 4 A, NPN epitaxial silicon transistor Samsung Electronic
210 KSC2333 500 V, 2 A, NPN epitaxial silicon transistor Samsung Electronic


Datasheets found :: 665
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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