| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N4930 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 182 |
2N4931 |
Trans GP BJT PNP 250V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 183 |
2N4932 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 184 |
2N4933 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 185 |
2N4934 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 186 |
2N4935 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 187 |
2N4936 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 188 |
2N4937 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 189 |
2N4938 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 190 |
2N4939 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 191 |
2N5010 |
Trans GP BJT NPN 0.2A 3-Pin TO-5 |
New Jersey Semiconductor |
| 192 |
2N5179 |
0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. |
Continental Device India Limited |
| 193 |
2N5771 |
Trans GP BJT PNP 15V 0.2A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 194 |
2N5830 |
Trans GP BJT NPN 100V 0.2A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 195 |
2N6424 |
PNP transistor, 225V, 0.25A |
SemeLAB |
| 196 |
2N6428 |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 Sleeve |
New Jersey Semiconductor |
| 197 |
2N6428A |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
| 198 |
2N6661 |
MOSPOWER N-Channel Enhancement Mode Transistor 80V 0.28A |
Siliconix |
| 199 |
2N7000 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 0.28A |
Siliconix |
| 200 |
2N7002E |
60V; 0.25A; N-channel enchanced mode field effect transistor |
SamHop Microelectronics Corp. |
| 201 |
2N7008 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 0.23A |
Siliconix |
| 202 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 203 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 204 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 205 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 206 |
2SA1318R |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 207 |
2SA1318S |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 208 |
2SA1318T |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 209 |
2SA1318U |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 210 |
2SA3331R |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
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