| No. |
Part Name |
Description |
Manufacturer |
| 181 |
HMC322 |
GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz |
Hittite Microwave Corporation |
| 182 |
HMC361S8G |
SMT GaAs HBT MMIC DIVIDE-BY-2, DC - 10.0 GHz |
Hittite Microwave Corporation |
| 183 |
HMC397 |
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10.0 GHz |
Hittite Microwave Corporation |
| 184 |
HMC405 |
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10.0 GHz |
Hittite Microwave Corporation |
| 185 |
HMC411MS8G |
GaAs MMIC SINGLE-BALANCED MIXER, 10.0 - 15.0 GHz |
Hittite Microwave Corporation |
| 186 |
IFC125-42-3 |
AC/DC open frame. 125 Watts. Output 1: Vnom 3.3V, Imax 10.0A. Output 2: Vnom 5.0V, Imax 15.0A. Output 3: Vnom 12.0V, Imax 5.0A. Output 4: Vnom -12.0V, Imax 0.5A. |
International Power Sources |
| 187 |
IR3081 |
XPHASE VR 10.0 Control IC. The Control IC combined with an IR XPhase TM Phase IC provides a full featured and flexible way toimplement a complete VR 10.0 power solution. |
International Rectifier |
| 188 |
IR3081 |
XPHASE VR 10.0 Control IC. The Control IC combined with an IR XPhase TM Phase IC provides a full featured and flexible way toimplement a complete VR 10.0 power solution. |
International Rectifier |
| 189 |
IR3081AM |
XPHASE VR 10.0 Control IC. A full featured and flexible way to implement a complete VR 10.0 power solution. |
International Rectifier |
| 190 |
IR3081AM |
XPHASE VR 10.0 Control IC. A full featured and flexible way to implement a complete VR 10.0 power solution. |
International Rectifier |
| 191 |
IR3081AMTR |
XPHASE VR 10.0 Control IC. A full featured and flexible way to implement a complete VR 10.0 power solution. |
International Rectifier |
| 192 |
IR3081AMTR |
XPHASE VR 10.0 Control IC. A full featured and flexible way to implement a complete VR 10.0 power solution. |
International Rectifier |
| 193 |
IR3081M |
XPHASE VR 10.0 Control IC. The Control IC combined with an IR XPhase TM Phase IC provides a full featured and flexible way toimplement a complete VR 10.0 power solution. |
International Rectifier |
| 194 |
IR3081M |
XPHASE VR 10.0 Control IC. The Control IC combined with an IR XPhase TM Phase IC provides a full featured and flexible way toimplement a complete VR 10.0 power solution. |
International Rectifier |
| 195 |
IR3081MTR |
XPHASE VR 10.0 Control IC. The Control IC combined with an IR XPhase TM Phase IC provides a full featured and flexible way toimplement a complete VR 10.0 power solution. |
International Rectifier |
| 196 |
IR3081MTR |
XPHASE VR 10.0 Control IC. The Control IC combined with an IR XPhase TM Phase IC provides a full featured and flexible way toimplement a complete VR 10.0 power solution. |
International Rectifier |
| 197 |
KBPC10005 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
| 198 |
KBPC1000G |
SINGLE PHASE 10.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 199 |
KBPC1001 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
| 200 |
KBPC1001G |
SINGLE PHASE 10.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 201 |
KBPC1002 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
| 202 |
KBPC1002G |
SINGLE PHASE 10.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 203 |
KBPC1004G |
SINGLE PHASE 10.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 204 |
KBPC1006G |
SINGLE PHASE 10.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 205 |
KBPC1008G |
SINGLE PHASE 10.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 206 |
KBPC1010G |
SINGLE PHASE 10.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 207 |
KR-1400AE |
Nominal capacity: 1400mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 10.0mOhm cadnica |
SANYO |
| 208 |
MA2100-A |
Si planar. Stabilized power supply. Nom zener voltage 10.0 V. |
Panasonic |
| 209 |
MA2100-B |
Si planar. Stabilized power supply. Nom zener voltage 10.0 V. |
Panasonic |
| 210 |
MAS1173ASAA |
IC for 10.00 - 20.00 MHz crystal oscillator |
mas MICRO ANALOG SYSTEMS |
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