| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1SMB110A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 110V. 600W peak power, 3.0W steady state. |
Motorola |
| 182 |
1SMC110 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 110V. 1500W peak power, 5.0W steady state. |
Motorola |
| 183 |
1SMC110A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 110V. 1500W peak power, 5.0W steady state. |
Motorola |
| 184 |
2N5950 |
1.5 Watt hermetically sealed glass silicon zener diode 110V |
Motorola |
| 185 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
| 186 |
2N6496 |
Trans GP BJT NPN 110V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 187 |
2N6500 |
NPN transistor, 110V, 4A |
SemeLAB |
| 188 |
2SB1492 |
Trans Darlington PNP 110V 6A |
New Jersey Semiconductor |
| 189 |
3.0SMCJ110 |
3000W voltage supressor, 110V |
MEI |
| 190 |
3.0SMCJ110A |
3000W voltage supressor, 110V |
MEI |
| 191 |
30KP110 |
Diode TVS Single Uni-Dir 110V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 192 |
30KP110A |
Diode TVS Single Uni-Dir 110V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 193 |
30KP110C |
Diode TVS Single Bi-Dir 110V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 194 |
30KP110CA |
Diode TVS Single Bi-Dir 110V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 195 |
3VR110 |
3 Watt Epoxy Silicon Zener Diode 110V |
Transitron Electronic |
| 196 |
5KP110 |
Diode TVS Single Uni-Dir 110V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 197 |
5KP110A |
Diode TVS Single Uni-Dir 110V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 198 |
5KP110C |
Diode TVS Single Bi-Dir 110V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 199 |
5KP110CA |
Diode TVS Single Bi-Dir 110V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 200 |
BZD10C110 |
Silicon Power Z Diode 1.3 Watt in metal case 110V |
Siemens |
| 201 |
BZV40C110 |
Silicon Power-Z-Diode 5W in plastic case 110V |
Siemens |
| 202 |
BZX55C110 |
Diode Zener Single 110V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 203 |
BZX85C110 |
Diode Zener Single 110V 5% 1.3W Automotive 2-Pin DO-41 |
New Jersey Semiconductor |
| 204 |
BZX98C110 |
Silicon Planar Z Diode 12.5 Watt in metal case 110V |
Siemens |
| 205 |
BZY97C110 |
Silicon Planar Z Diode 1.5 Watt in plastic case 110V |
Siemens |
| 206 |
CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE. |
Continental Device India Limited |
| 207 |
CFD1933A |
60.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 1000 hFE. |
Continental Device India Limited |
| 208 |
CFD611 |
60.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 1000 hFE. |
Continental Device India Limited |
| 209 |
CSB1626 |
30.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 5000 - 30000 hFE. |
Continental Device India Limited |
| 210 |
CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE. |
Continental Device India Limited |
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