| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1406F |
600 V single phase bridge 12 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 182 |
1406UF |
600 V single phase bridge 12 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 183 |
1410 |
1000 V single phase bridge 12 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 184 |
1410F |
1000 V single phase bridge 12 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 185 |
1410UF |
1000 V single phase bridge 12 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 186 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 187 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 188 |
1503-120B |
Max delay 120 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 189 |
1504-120B |
Delay 120 +/-6 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 190 |
1504-120C |
Delay 120 +/-6 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 191 |
1504-120E |
Delay 120 +/-6 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 192 |
1504-120F |
Delay 120 +/-6 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 193 |
1504-125D |
Delay 125 +/-6.3 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 194 |
15049AC |
Surge arrester (gas filled). Nominal breakdown voltage 120VAC. |
NTE Electronics |
| 195 |
150QD11 |
Silicon alloy-diffused junction rectifier 1200V 150A |
TOSHIBA |
| 196 |
1513-120B |
Delay 120 +/-6 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 197 |
1513-120Y |
Delay 120 +/-6 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 198 |
1514-120B |
Delay 120 +/-6 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 199 |
1514-120D |
Delay 120 +/-6 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 200 |
1514-120Y |
Delay 120 +/-6 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 201 |
15KP110 |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
| 202 |
15KP110A |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A. |
Panjit International Inc |
| 203 |
15KP110C |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
| 204 |
15KP110CA |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A. |
Panjit International Inc |
| 205 |
15KP12 |
Diode TVS Single Uni-Dir 12V 15KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 206 |
15KP120 |
Diode TVS Single Uni-Dir 120V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 207 |
15KP120 |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A. |
Panjit International Inc |
| 208 |
15KP120A |
Diode TVS Single Uni-Dir 120V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 209 |
15KP120A |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A. |
Panjit International Inc |
| 210 |
15KP120C |
Diode TVS Single Bi-Dir 120V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
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