No. |
Part Name |
Description |
Manufacturer |
181 |
2SCR375P5 |
NPN 120V 1.5A Medium Power Transistor |
ROHM |
182 |
2SCR375P5T100 |
NPN 120V 1.5A Medium Power Transistor |
ROHM |
183 |
30KP120 |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
184 |
30KP120A |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
185 |
30KP120C |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
186 |
30KP120CA |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
187 |
30KPA120 |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
188 |
30KPA120A |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
189 |
30KPA120C |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
190 |
30KPA120CA |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
191 |
4DZ120 |
4W 120V Voltage Regulator Diode |
IPRS Baneasa |
192 |
50DZ120 |
50W 120V ZENER DIODE |
IPRS Baneasa |
193 |
5KP120 |
Diode TVS Single Uni-Dir 120V 5KW 2-Pin Case P600 |
New Jersey Semiconductor |
194 |
5KP120A |
Diode TVS Single Uni-Dir 120V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
195 |
5KP120C |
Diode TVS Single Bi-Dir 120V 5KW 2-Pin Case P600 |
New Jersey Semiconductor |
196 |
5KP120CA |
Diode TVS Single Bi-Dir 120V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
197 |
BD683 |
40.000W Darlington NPN Plastic Leaded Transistor. 120V Vceo, 4.000A Ic, 750 hFE. |
Continental Device India Limited |
198 |
BD683 |
Trans Darlington NPN 120V 4A 3-Pin TO-126 |
New Jersey Semiconductor |
199 |
BD684 |
40.000W Darlington PNP Plastic Leaded Transistor. 120V Vceo, 4.000A Ic, 750 hFE. |
Continental Device India Limited |
200 |
BD684 |
Trans Darlington PNP 120V 4A 3-Pin TO-126 |
New Jersey Semiconductor |
201 |
BD955 |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
202 |
BD956 |
40.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
203 |
BDT60C |
Trans Darlington PNP 120V 4A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
204 |
BDT62 |
Trans Darlington PNP 120V 4A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
205 |
BDT65C |
Trans Darlington NPN 120V 12A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
206 |
BDV65C |
Trans Darlington NPN 120V 12A 3-Pin(3+Tab) SOT-93 |
New Jersey Semiconductor |
207 |
BDY53 |
Trans GP BJT NPN 120V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
208 |
BDY54 |
Trans GP BJT NPN 120V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
209 |
BDY56 |
Trans GP BJT NPN 120V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
210 |
BDY72 |
Trans GP BJT NPN 120V 3A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
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