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Datasheets for 150

Datasheets found :: 2117
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No. Part Name Description Manufacturer
181 29C021TM-1 High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. Turbo IC
182 2N2906A hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA SGS Thomson Microelectronics
183 2N3298 NPN silicon transistor for power oscillator applications to 150 MHz Motorola
184 2N3478 0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. Continental Device India Limited
185 2N3705 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE Continental Device India Limited
186 2N3713 80 V, 10 A, 150 W, NPN silicon power transistor Texas Instruments
187 2N3714 100 V, 10 A, 150 W, NPN silicon power transistor Texas Instruments
188 2N3715 10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS Motorola
189 2N3715 80 V, 10 A, 150 W, NPN silicon power transistor Texas Instruments
190 2N3716 10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS Motorola
191 2N3716 100 V, 10 A, 150 W, NPN silicon power transistor Texas Instruments
192 2N3724 1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. Continental Device India Limited
193 2N3725 1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. Continental Device India Limited
194 2N3771 50 V, 30 A, 150 W, NPN silicon power transistor Texas Instruments
195 2N3772 100 V, 30 A, 150 W, NPN silicon power transistor Texas Instruments
196 2N3791 -60 V, -10 A, 150 W, PNP silicon power transistor Texas Instruments
197 2N3818 NPN silicon transistor for high-frequency power applications to 150 MHz Motorola
198 2N4923 30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 30 - 150 hFE. Continental Device India Limited
199 2N5086 0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE Continental Device India Limited
200 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A ST Microelectronics
201 2N5401HRG Hi-Rel PNP bipolar transistor 150 V, 0.5 A ST Microelectronics
202 2N5401HRT Hi-Rel PNP bipolar transistor 150 V, 0.5 A ST Microelectronics
203 2N5401RHRG Hi-Rel PNP bipolar transistor 150 V, 0.5 A ST Microelectronics
204 2N5401RHRT Hi-Rel PNP bipolar transistor 150 V, 0.5 A ST Microelectronics
205 2N5401RUBG Hi-Rel PNP bipolar transistor 150 V, 0.5 A ST Microelectronics
206 2N5401RUBT Hi-Rel PNP bipolar transistor 150 V, 0.5 A ST Microelectronics
207 2N5401UB1 Hi-Rel PNP bipolar transistor 150 V, 0.5 A ST Microelectronics
208 2N5401UBG Hi-Rel PNP bipolar transistor 150 V, 0.5 A ST Microelectronics
209 2N5401UBT Hi-Rel PNP bipolar transistor 150 V, 0.5 A ST Microelectronics
210 2N5415 1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. Continental Device India Limited


Datasheets found :: 2117
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