No. |
Part Name |
Description |
Manufacturer |
181 |
29C021TM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
182 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
183 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
184 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
185 |
2N3705 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE |
Continental Device India Limited |
186 |
2N3713 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
187 |
2N3714 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
188 |
2N3715 |
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS |
Motorola |
189 |
2N3715 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
190 |
2N3716 |
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS |
Motorola |
191 |
2N3716 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
192 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
193 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
194 |
2N3771 |
50 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
195 |
2N3772 |
100 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
196 |
2N3791 |
-60 V, -10 A, 150 W, PNP silicon power transistor |
Texas Instruments |
197 |
2N3818 |
NPN silicon transistor for high-frequency power applications to 150 MHz |
Motorola |
198 |
2N4923 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
199 |
2N5086 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE |
Continental Device India Limited |
200 |
2N5401HR |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
201 |
2N5401HRG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
202 |
2N5401HRT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
203 |
2N5401RHRG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
204 |
2N5401RHRT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
205 |
2N5401RUBG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
206 |
2N5401RUBT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
207 |
2N5401UB1 |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
208 |
2N5401UBG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
209 |
2N5401UBT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
210 |
2N5415 |
1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
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