| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N5280UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 190 V. |
Microsemi |
| 182 |
1N5356 |
Zener Diode 19V 5W |
Motorola |
| 183 |
1N5356 |
Diode Zener Single 19V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 184 |
1N5356A |
Zener Diode 19V 5W |
Motorola |
| 185 |
1N5356A |
Diode Zener Single 19V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 186 |
1N5356B |
Zener Diode 19V 5W |
Motorola |
| 187 |
1N5356B |
Diode Zener Single 19V 5% 5W 2-Pin DO-201AE |
New Jersey Semiconductor |
| 188 |
1N5356B |
Zener 19V 5W 5% |
ON Semiconductor |
| 189 |
1N5356BRL |
Zener 19V 5W 5% |
ON Semiconductor |
| 190 |
1N5356C |
Diode Zener Single 19V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 191 |
1N5356D |
Diode Zener Single 19V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 192 |
1N5387 |
Zener Diode 190V 5W |
Motorola |
| 193 |
1N5387 |
Diode Zener Single 190V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 194 |
1N5387A |
Zener Diode 190V 5W |
Motorola |
| 195 |
1N5387A |
Diode Zener Single 190V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 196 |
1N5387B |
Zener Diode 190V 5W |
Motorola |
| 197 |
1N5387B |
Diode Zener Single 190V 5% 5W 2-Pin DO-201AE |
New Jersey Semiconductor |
| 198 |
1N5387C |
Diode Zener Single 190V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 199 |
1N5387D |
Diode Zener Single 190V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 200 |
1N5539 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 19V ±20% tolerance |
Motorola |
| 201 |
1N5539 |
Diode Zener Single 19V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 202 |
1N5539A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 19.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 203 |
1N5539A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 19V ±10% tolerance |
Motorola |
| 204 |
1N5539A |
Diode Zener Single 19V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 205 |
1N5539B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 19.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 206 |
1N5539B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 19V ±5% tolerance |
Motorola |
| 207 |
1N5539B |
Diode Zener Single 19V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 208 |
1N5539C |
Diode Zener Single 19V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 209 |
1N5539D |
Diode Zener Single 19V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 210 |
1N5642 |
Diode TVS Single Uni-Dir 19.4V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
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