No. |
Part Name |
Description |
Manufacturer |
181 |
1N759C |
12 V, 20 mA, zener diode |
Leshan Radio Company |
182 |
1N759D |
500mW, silicon zener diode. Zener voltage 12.0 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
183 |
1N759D |
12 V, 20 mA, zener diode |
Leshan Radio Company |
184 |
1PS66SB62 |
40 V, 20 mA low C_d Schottky barrier diodes |
Philips |
185 |
1PS66SB62 |
1PS66SB62; 1PS76SB62; 40 V, 20 mA low C_d Schottky barrier diodes |
Philips |
186 |
1PS66SB63 |
5 V, 20 mA low C_d Schottky barrier diodes |
Philips |
187 |
1PS66SB63 |
1PS66SB63; 1PS79SB63; 5 V, 20 mA low C_d Schottky barrier diodes |
Philips |
188 |
AD421BN |
Loop-Powered 4 mA to 20 mA DAC |
Analog Devices |
189 |
AD421BR |
Loop-Powered 4 mA to 20 mA DAC |
Analog Devices |
190 |
AD421BRRL |
Loop-Powered 4 mA to 20 mA DAC |
Analog Devices |
191 |
AD5410 |
Single-Channel, 12-/16-Bit, Serial Input, 4 mA to 20 mA, Current Source DAC |
Analog Devices |
192 |
AD5420 |
Single-Channel, 12-/16-Bit, Serial Input, 4 mA to 20 mA, Current Source DAC |
Analog Devices |
193 |
AD5755 |
Quad Channel, 16-Bit, Serial Input, 4 mA to 20 mA and Voltage Output DAC, Dynamic Power Control |
Analog Devices |
194 |
BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
195 |
BFP182R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
196 |
BFP182W |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
197 |
BFP81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
Siemens |
198 |
BFQ29 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
199 |
BFQ29P |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
200 |
BFQ71 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) |
Siemens |
201 |
BFQ76 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.) |
Siemens |
202 |
BFR92P |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
203 |
BFR92W |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
204 |
BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA |
Infineon |
205 |
E187 |
T-3 1/4 red & green jumbo, bi-color led (10mm). Lens white, peak wave length at 20 mA 660nm. Lens diffused, peak wave length 565nm. |
Gilway Technical Lamp |
206 |
E188 |
T-3 1/4 red & green jumbo, bi-color led (10mm). Lens white, peak wave length at 20 mA 660nm. Lens diffused, peak wave length 565nm. |
Gilway Technical Lamp |
207 |
E189 |
T-3 1/4 green & yellow jumbo, bi-color led (10mm). Lens white, peak wave length at 20 mA 565nm. Lens diffused, peak wave length 590nm. |
Gilway Technical Lamp |
208 |
EVAL-AD421EB |
Loop-Powered 4 mA to 20 mA DAC |
Analog Devices |
209 |
FZL111 |
BCD 7-segment decoder and driver with open collector output with 16.5 V / 20 mA |
Siemens |
210 |
HCPL-4100 |
Optically Coupled 20 mA Optically Coupled 20 mA |
Agilent (Hewlett-Packard) |
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