| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N3820 |
Zener Diode 200V 1.5W |
Motorola |
| 182 |
1N3820A |
Zener Diode 200V 1.5W |
Motorola |
| 183 |
1N3820B |
Zener Diode 200V 1.5W |
Motorola |
| 184 |
1N3881 |
Diode Switching 200V 6A 2-Pin DO-4 |
New Jersey Semiconductor |
| 185 |
1N3881 |
6A Fast-Recovery Silicon Rectifier 200V |
RCA Solid State |
| 186 |
1N3881 |
Diffused silicon junction rectifier designed for HF range 6A 200V |
Texas Instruments |
| 187 |
1N3881A |
Diode Switching 200V 6A 2-Pin DO-4 |
New Jersey Semiconductor |
| 188 |
1N3881B |
Diode Switching 200V 6A 2-Pin DO-4 |
New Jersey Semiconductor |
| 189 |
1N3881R |
6A Fast-Recovery Silicon Rectifier, reverse-polarity 200V |
RCA Solid State |
| 190 |
1N3881R |
Diffused silicon junction rectifier designed for HF range 6A 200V, reverse polarity |
Texas Instruments |
| 191 |
1N3891 |
Diode Switching 200V 12A 2-Pin DO-4 |
New Jersey Semiconductor |
| 192 |
1N3891 |
12A Fast-Recovery Silicon Rectifier 200V |
RCA Solid State |
| 193 |
1N3891 |
Diffused silicon junction rectifier designed for HF range 12A 200V |
Texas Instruments |
| 194 |
1N3891A |
Diode Switching 200V 20A 2-Pin DO-4 |
New Jersey Semiconductor |
| 195 |
1N3891M |
Diode Switching 200V 12A 2-Pin DO-4 |
New Jersey Semiconductor |
| 196 |
1N3891R |
12A Fast-Recovery Silicon Rectifier 200V, reverse polarity |
RCA Solid State |
| 197 |
1N3891R |
Diffused silicon junction rectifier designed for HF range 12A 200V, reverse polarity |
Texas Instruments |
| 198 |
1N3901 |
20A Fast-Recovery Silicon Rectifier 200V |
RCA Solid State |
| 199 |
1N3901R |
20A Fast-Recovery Silicon Rectifier 200V, reverse polarity |
RCA Solid State |
| 200 |
1N3911 |
30A Fast-Recovery Silicon Rectifier 200V |
RCA Solid State |
| 201 |
1N3911R |
30A Fast-Recovery Silicon Rectifier 200V reverse polarity |
RCA Solid State |
| 202 |
1N3938 |
2A 200V Rectifier Diode |
Motorola |
| 203 |
1N3938 |
Diode Switching 200V 100A 2-Pin DO-8 |
New Jersey Semiconductor |
| 204 |
1N3939 |
Diode Switching 200V 100A 2-Pin DO-8 |
New Jersey Semiconductor |
| 205 |
1N4003 |
V(rrm): 200V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 206 |
1N4003 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 200V |
IPRS Baneasa |
| 207 |
1N4003 |
1A 200V Rectifier Diode |
IPRS Baneasa |
| 208 |
1N4003 |
1A Plastic Silicon Rectifier 200V |
ITT Semiconductors |
| 209 |
1N4003 |
1 AMP, 200V GLASS RECTIFIER |
ITT Semiconductors |
| 210 |
1N4003 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 200V. |
Jinan Gude Electronic Device |
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