No. |
Part Name |
Description |
Manufacturer |
181 |
2SC2706 |
Silicon NPN epitaxial audio frequency power transistor, complementary to 2SA1146 |
TOSHIBA |
182 |
2SC2951 |
The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. |
Advanced Semiconductor |
183 |
2SC2952 |
The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. |
Advanced Semiconductor |
184 |
2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 |
Isahaya Electronics Corporation |
185 |
2SC3242 |
900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282 |
Isahaya Electronics Corporation |
186 |
2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A |
Isahaya Electronics Corporation |
187 |
2SC3243 |
900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 |
Isahaya Electronics Corporation |
188 |
2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 |
Isahaya Electronics Corporation |
189 |
2SC3245 |
900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 |
Isahaya Electronics Corporation |
190 |
2SC3245A |
900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A |
Isahaya Electronics Corporation |
191 |
2SC3246 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286 |
Isahaya Electronics Corporation |
192 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
193 |
2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 |
Isahaya Electronics Corporation |
194 |
2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 |
Isahaya Electronics Corporation |
195 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
196 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
197 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
198 |
2SC509 |
Silicon NPN epitaxial planar medium power transistor, complementary to 2SA509 |
TOSHIBA |
199 |
2SC5337-T1 |
New power mini(a product with gain improved of 2SC4536) |
NEC |
200 |
2SC790 |
Silicon NPN triple diffused power transistor, complementary to 2SA490 |
TOSHIBA |
201 |
2SD1148 |
Silicon NPN triple diffused power transistor, complementary to 2SB863 |
TOSHIBA |
202 |
2SD1292 |
2SD1292 2SD1293M |
ROHM |
203 |
2SD1293 |
2SD1292 2SD1293M |
ROHM |
204 |
2SD1293M |
2SD1292 2SD1293M |
ROHM |
205 |
2SD1355 |
Silicon NPN triple diffused power transistor, complementary to 2SB995 |
TOSHIBA |
206 |
2SD1356 |
Silicon NPN triple diffused power transistor, complementary to 2SB996 |
TOSHIBA |
207 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
208 |
2SD1486 |
Complementary pair with 2SB1055 |
Panasonic |
209 |
2SD1603 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENT PAIR WITH 2SB1103 AND 2SB1104 |
Hitachi Semiconductor |
210 |
2SD1603 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENT PAIR WITH 2SB1103 AND 2SB1104 |
Hitachi Semiconductor |
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