| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N5256D |
30 V, 4.2 mA, zener diode |
Leshan Radio Company |
| 182 |
1N5336 |
Zener Diode 4.3V 5W |
Motorola |
| 183 |
1N5336 |
Diode Zener Single 4.3V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 184 |
1N5336A |
Zener Diode 4.3V 5W |
Motorola |
| 185 |
1N5336A |
Diode Zener Single 4.3V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 186 |
1N5336B |
Zener Diode 4.3V 5W |
Motorola |
| 187 |
1N5336B |
Diode Zener Single 4.3V 5% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 188 |
1N5336C |
Diode Zener Single 4.3V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 189 |
1N5336D |
Diode Zener Single 4.3V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 190 |
1N5337 |
Zener Diode 4.7V 5W |
Motorola |
| 191 |
1N5337 |
Diode Zener Single 4.7V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 192 |
1N5337A |
Zener Diode 4.7V 5W |
Motorola |
| 193 |
1N5337A |
Diode Zener Single 4.7V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 194 |
1N5337B |
Zener Diode 4.7V 5W |
Motorola |
| 195 |
1N5337B |
Diode Zener Single 4.7V 5% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 196 |
1N5337C |
Diode Zener Single 4.7V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 197 |
1N5337D |
Diode Zener Single 4.7V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 198 |
1N5440 |
Diode VAR Cap Single 30V 4.7pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 199 |
1N5521 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.3V ±20% tolerance |
Motorola |
| 200 |
1N5521 |
Diode Zener Single 4.3V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 201 |
1N5521A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 202 |
1N5521A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.3V ±10% tolerance |
Motorola |
| 203 |
1N5521A |
Diode Zener Single 4.3V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 204 |
1N5521B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 205 |
1N5521B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.3V ±5% tolerance |
Motorola |
| 206 |
1N5521B |
Diode Zener Single 4.3V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 207 |
1N5521C |
Diode Zener Single 4.3V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 208 |
1N5521D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 209 |
1N5521D |
Diode Zener Single 4.3V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 210 |
1N5522 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.7V ±20% tolerance |
Motorola |
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