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Datasheets for 45

Datasheets found :: 426
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 FST8035 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
182 FST8040 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
183 FST8045 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
184 FST8320SL 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
185 FST8330SL 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
186 FST8335SL 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
187 FST8340SL 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
188 FST8345SL 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
189 FST8420SL 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
190 FST8430SL 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
191 FST8435SL 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
192 FST8440SL 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
193 FST8445SL 80 Amp Rectifier 20 to 45 Volts Schottky Barrier Micro Commercial Components
194 ISL43410 Analog Switch, DPDT or 2 to 1 Mux, Single, Ron = 45 @ 12V, Single Supply +2V to +12V, with inhibit, off leakage 1nA Intersil
195 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
196 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
197 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
198 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
199 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
200 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
201 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
202 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
203 K4R271869B-MCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
204 K4R271869B-MCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
205 K4R271869B-NCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
206 K4R271869B-NCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
207 K4R441869AM-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
208 K4R441869AM-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
209 K4R441869AN-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
210 K4R441869AN-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic


Datasheets found :: 426
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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