| No. |
Part Name |
Description |
Manufacturer |
| 181 |
AQZ262 |
Power photoMOS relay (high capacity type). AC/DC type. Output rating: load voltage 60 V, load current 6.0 A. |
Matsushita Electric Works(Nais) |
| 182 |
AR609LTS06 |
600 V, 6825 A, 60 kA rectifier diode |
POSEICO SPA |
| 183 |
AT91RM3400 |
The AT91RM3400 features a 60 MIPS ARM7TDMI processor with 96K bytes of SRAM, 256K bytes of ROM, USB Device Interface, Power Management Controller, Real Time Clock, System Timer, Synchronous Serial Controller, 6-channel Timer Counter, 4-cha |
Atmel |
| 184 |
BC212 |
0.350W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - hFE |
Continental Device India Limited |
| 185 |
BC212 |
ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW |
Fairchild Semiconductor |
| 186 |
BC212 |
ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW |
Fairchild Semiconductor |
| 187 |
BC212L |
0.350W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - hFE |
Continental Device India Limited |
| 188 |
BD137 |
hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 189 |
BD168 |
PNP silicon power transistor. 1.5 A, 60 V, 20 W. |
Motorola |
| 190 |
BD189 |
NPN silicon power transistor. 4 A, 60 V, 40 W. |
Motorola |
| 191 |
BD236 |
NPN silicon power transistor. 2 A, 60 V, 25 W. |
Motorola |
| 192 |
BD439 |
Plastic medium power silicon NPN transistor. 4 A, 60 V. |
Motorola |
| 193 |
BD517-1 |
NPN silicon amplifier transistor. 10 W, 60 V. |
Motorola |
| 194 |
BD517-5 |
NPN silicon amplifier transistor. 10 W, 60 V. |
Motorola |
| 195 |
BD518 |
PNP silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
| 196 |
BD518-1 |
PNP silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
| 197 |
BD518-5 |
PNP silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
| 198 |
BD525-1 |
NPN silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
| 199 |
BD525-5 |
NPN silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
| 200 |
BD526-1 |
PNP silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
| 201 |
BD526-5 |
PNP silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
| 202 |
BD535 |
complementary silicon NPN plastic power transistor. 60 V, 4 A, 50 W. |
Motorola |
| 203 |
BD536 |
complementary silicon PNP plastic power transistor. 60 V, 4 A, 50 W. |
Motorola |
| 204 |
BD645 |
8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 205 |
BD897 |
8 A N-P-N darlington power transistor. 60 V. 70 W. |
General Electric Solid State |
| 206 |
BD897A |
8 A N-P-N darlington power transistor. 60 V. 70 W. |
General Electric Solid State |
| 207 |
BF422BPL |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 208 |
BG 1972-6100-010 |
High Voltage Generator 60 kV / 100 uA |
Vishay |
| 209 |
BS170 |
Small Signal MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
| 210 |
BS170-D |
Small Signal MOSFET 500 mAmps, 60 Volts N-Channel TO-92 |
ON Semiconductor |
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