| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N980A |
Zener Diode 62V |
Motorola |
| 182 |
1N980A |
Diode Zener Single 62V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 183 |
1N980B |
Zener Diode 62V |
Motorola |
| 184 |
1N980B |
Diode Zener Single 62V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 185 |
1N980C |
Diode Zener Single 62V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 186 |
1N980D |
Diode Zener Single 62V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 187 |
1S250 |
Silicon junction zener diode 1W 62V |
TOSHIBA |
| 188 |
1S292 |
Silicon junction zener diode 10W 62V |
TOSHIBA |
| 189 |
1S3062 |
1W Zener diode 62V |
Texas Instruments |
| 190 |
1S3062A |
1W Zener diode 62V, ±5% tolerance |
Texas Instruments |
| 191 |
1S5062 |
Silicon power zener diode 10W 62V |
Texas Instruments |
| 192 |
1S5062A |
Silicon power zener diode 10W 62V, ±5% tolerance |
Texas Instruments |
| 193 |
1S5062C |
Silicon power zener diode 10W 62V, double anode |
Texas Instruments |
| 194 |
1S5062R |
Silicon power zener diode 10W 62V, reverse polarity |
Texas Instruments |
| 195 |
1S6062 |
Silicon power zener diode 62V |
Texas Instruments |
| 196 |
1S6062A |
Silicon power zener diode 62V, ±5% tolerance |
Texas Instruments |
| 197 |
1S6062R |
Silicon power zener diode 62V, reverse polarity |
Texas Instruments |
| 198 |
1SMB5944A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 62 V. +-10% tolerance. |
Motorola |
| 199 |
1SMB5944B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 62 V. +-5% tolerance. |
Motorola |
| 200 |
2322 626 1. . . . |
NTC Thermistors, Glass Encapsulated Miniature Bead |
Vishay |
| 201 |
2322 626 2. . . . |
NTC Thermistors, Glass Encapsulated Miniature Bead |
Vishay |
| 202 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 203 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 204 |
2N4123 |
NPN Silicon General Purpose Transistor 625mW |
Micro Commercial Components |
| 205 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 206 |
2N4124 |
NPN Silicon General Purpose Transistor 625mW |
Micro Commercial Components |
| 207 |
2N4124 |
General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 208 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 209 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 210 |
2N4400 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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