| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N5247D |
17 V, 7.4 mA, zener diode |
Leshan Radio Company |
| 182 |
1N5248A |
18 V, 7.0 mA, zener diode |
Leshan Radio Company |
| 183 |
1N5248C |
18 V, 7.0 mA, zener diode |
Leshan Radio Company |
| 184 |
1N5248D |
18 V, 7.0 mA, zener diode |
Leshan Radio Company |
| 185 |
1N5343 |
Zener Diode 7.5V 5W |
Motorola |
| 186 |
1N5343 |
Diode Zener Single 7.5V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 187 |
1N5343A |
Zener Diode 7.5V 5W |
Motorola |
| 188 |
1N5343A |
Diode Zener Single 7.5V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 189 |
1N5343B |
Zener Diode 7.5V 5W |
Motorola |
| 190 |
1N5343B |
Diode Zener Single 7.5V 5% 5W 2-Pin DO-201AE |
New Jersey Semiconductor |
| 191 |
1N5343B |
Zener 7.5V 5W 5% |
ON Semiconductor |
| 192 |
1N5343B |
Zener 7.5V 5W 5% |
ON Semiconductor |
| 193 |
1N5343BRL |
Zener 7.5V 5W 5% |
ON Semiconductor |
| 194 |
1N5343BRL |
Zener 7.5V 5W 5% |
ON Semiconductor |
| 195 |
1N5343C |
Diode Zener Single 7.5V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 196 |
1N5343D |
Diode Zener Single 7.5V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 197 |
1N5527 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 7.5V ±20% tolerance |
Motorola |
| 198 |
1N5527 |
Diode Zener Single 7.5V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 199 |
1N5527A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 200 |
1N5527A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 7.5V ±10% tolerance |
Motorola |
| 201 |
1N5527A |
Diode Zener Single 7.5V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 202 |
1N5527B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 203 |
1N5527B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 7.5V ±5% tolerance |
Motorola |
| 204 |
1N5527B |
Diode Zener Single 7.5V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 205 |
1N5527B-1 |
Diode Zener Single 7.5V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 206 |
1N5527C |
Diode Zener Single 7.5V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 207 |
1N5527D |
Diode Zener Single 7.5V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 208 |
1N5631A |
Diode TVS Single Uni-Dir 7.02V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 209 |
1N5632 |
Diode TVS Single Uni-Dir 7.37V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 210 |
1N5632A |
Diode TVS Single Uni-Dir 7.78V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
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