| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N5496 |
50.000W General Purpose NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 20 - 100 hFE |
Continental Device India Limited |
| 182 |
2N5496 |
Trans GP BJT NPN 70V 7A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 183 |
2N6101 |
75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 184 |
2N6106 |
Trans GP BJT PNP 70V 7A 3-Pin(3+Tab) TO-213AA |
New Jersey Semiconductor |
| 185 |
2N6107 |
40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
| 186 |
2N6107 |
Trans GP BJT PNP 70V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 187 |
2N6107 |
Power 7A 70V Discrete PNP |
ON Semiconductor |
| 188 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 189 |
2N6292 |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
| 190 |
2N6292 |
Power 7A 70V Discrete NPN |
ON Semiconductor |
| 191 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 192 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
| 193 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 194 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 195 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 196 |
2N691 |
Thyristor SCR 700V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 197 |
2N691A |
Thyristor SCR 700V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 198 |
2N7104 |
30 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 199 |
2N7105 |
30 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 200 |
2N7106 |
10 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 201 |
2N7107 |
10 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 202 |
2N7108 |
20 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 203 |
2N7109 |
20 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 204 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 205 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 206 |
2SC1196 |
Silicon NPN epitaxial planar transistor, 700MHz- Power amplifier applications |
TOSHIBA |
| 207 |
2SC1197 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
| 208 |
2SC1198 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
| 209 |
2SC2098 |
Trans GP BJT NPN 70V 6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 210 |
2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 |
Isahaya Electronics Corporation |
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