No. |
Part Name |
Description |
Manufacturer |
181 |
BDS21 |
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
SemeLAB |
182 |
BDS21SMD |
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
SemeLAB |
183 |
BDX63 |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
SemeLAB |
184 |
BDX63A |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
SemeLAB |
185 |
BDX63B |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
SemeLAB |
186 |
BDX63C |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
SemeLAB |
187 |
BDX67 |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
SemeLAB |
188 |
BDX67A |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
SemeLAB |
189 |
BDX67B |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
SemeLAB |
190 |
BDX67C |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
SemeLAB |
191 |
BF324 |
Epitaxial planar PNP transistor, intended for common base input stages in FM tuners |
SGS-ATES |
192 |
BF414 |
Epitaxial planar PNP transistor, intended for use as common base amplifier in the VHF range |
SGS-ATES |
193 |
BF414 |
NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages) |
Siemens |
194 |
BFY65 |
Silicon NPN epitaxial planar transistors with high collector base voltage for nixie drivers |
AEG-TELEFUNKEN |
195 |
BFY80 |
Silicon NPN epitaxial planar transistors with high collector base voltage for nixie drivers |
AEG-TELEFUNKEN |
196 |
BLV80/28 |
VHF Power NPN silicon planar epitaxial transistor intended for use in base stations in the VHF mobile radio band |
Philips |
197 |
BSM100GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
198 |
BSM100GB120DN2K |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
199 |
BSM100GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
200 |
BSM100GT120DN2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
201 |
BSM150GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
202 |
BSM150GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
203 |
BSM200GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
204 |
BSM200GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
205 |
BSM25GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
206 |
BSM25GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
207 |
BSM400GB60DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
208 |
BSM50GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
209 |
BSM50GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
210 |
BSM50GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
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