| No. |
Part Name |
Description |
Manufacturer |
| 181 |
STPSC606G-TR |
600 V power Schottky silicon carbide diode |
ST Microelectronics |
| 182 |
STPSC6H065 |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
| 183 |
STPSC6H065B-TR |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
| 184 |
STPSC6H065D |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
| 185 |
STPSC6H065DI |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
| 186 |
STPSC6H065G-TR |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
| 187 |
STPSC6H12 |
1200 V power Schottky silicon carbide diode |
ST Microelectronics |
| 188 |
STPSC6H12B-TR1 |
1200 V power Schottky silicon carbide diode |
ST Microelectronics |
| 189 |
STPSC6TH13TI |
Dual 650 V power Schottky silicon carbide diode in series |
ST Microelectronics |
| 190 |
STPSC806 |
600 V power Schottky silicon carbide diode |
ST Microelectronics |
| 191 |
STPSC806D |
600 V power Schottky silicon carbide diode |
ST Microelectronics |
| 192 |
STPSC806G-TR |
600 V power Schottky silicon carbide diode |
ST Microelectronics |
| 193 |
STPSC8H065 |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
| 194 |
STPSC8H065B-TR |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
| 195 |
STPSC8H065C |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
| 196 |
STPSC8H065CT |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
| 197 |
STPSC8H065D |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
| 198 |
STPSC8H065DI |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
| 199 |
STPSC8H065G-TR |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
| 200 |
STPSC8TH13TI |
Dual 650 V power Schottky silicon carbide diode in series |
ST Microelectronics |
| 201 |
UPSC100 |
Silicon Carbide (SiC) Schottky |
Microsemi |
| 202 |
UPSC200 |
Silicon Carbide (SiC) Schottky |
Microsemi |
| 203 |
UPSC203 |
Silicon Carbide (SiC) Schottky |
Microsemi |
| 204 |
UPSC400 |
Silicon Carbide (SiC) Schottky |
Microsemi |
| 205 |
UPSC403 |
Silicon Carbide (SiC) Schottky |
Microsemi |
| 206 |
UPSC600 |
Silicon Carbide (SiC) Schottky |
Microsemi |
| 207 |
UPSC603 |
Silicon Carbide (SiC) Schottky |
Microsemi |
| 208 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 209 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 210 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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