No. |
Part Name |
Description |
Manufacturer |
181 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
182 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
183 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
184 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
185 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
186 |
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
187 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
188 |
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
189 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
190 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
191 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
192 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
193 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
194 |
1N6672 |
30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
195 |
1N6672JAN |
30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
196 |
1N6672JANTX |
30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
197 |
1N6672JANTXV |
30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
198 |
1N6673 |
30 A 400V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
199 |
1N6674 |
30 A 500V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
200 |
1S1579 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
201 |
1S1580 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
202 |
2001 |
1 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
203 |
2003 |
3 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
204 |
2005 |
5 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
205 |
200CNQ035 |
35V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
206 |
200CNQ040 |
40V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
207 |
200CNQ045 |
45V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
208 |
2010 |
10 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
209 |
2015M |
15 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
210 |
201CMQ035 |
35V 200A Schottky Common Cathode Diode in a TO-244AB Isolated package |
International Rectifier |
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