No. |
Part Name |
Description |
Manufacturer |
181 |
2N6350 |
Trans Darlington NPN 80V 5A 4-Pin TO-33 |
New Jersey Semiconductor |
182 |
2N6351 |
NPN Darlington Transistor |
Microsemi |
183 |
2N6351 |
Trans Darlington NPN 150V 5A 4-Pin TO-33 |
New Jersey Semiconductor |
184 |
2N6352 |
NPN Darlington Transistor |
Microsemi |
185 |
2N6352 |
Trans Darlington NPN 80V 5A 4-Pin(3+Tab) TO-213AA |
New Jersey Semiconductor |
186 |
2N6353 |
NPN Darlington Transistor |
Microsemi |
187 |
2N6353 |
Trans Darlington NPN 150V 5A 4-Pin(3+Tab) TO-213AA |
New Jersey Semiconductor |
188 |
2N6383 |
Power Darlington NPN transistor |
FERRANTI |
189 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
190 |
2N6383 |
NPN Darlington Transistor |
Microsemi |
191 |
2N6383 |
15A peak complementary silicon power darlington NPN transistor |
Motorola |
192 |
2N6383 |
Trans Darlington NPN 40V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
193 |
2N6384 |
Power Darlington NPN transistor |
FERRANTI |
194 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
195 |
2N6384 |
NPN Darlington Transistor |
Microsemi |
196 |
2N6384 |
15A peak complementary silicon power darlington NPN transistor |
Motorola |
197 |
2N6384 |
Trans Darlington NPN 60V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
198 |
2N6385 |
Power Darlington NPN transistor |
FERRANTI |
199 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
200 |
2N6385 |
NPN Darlington Transistor |
Microsemi |
201 |
2N6385 |
15A peak complementary silicon power darlington NPN transistor |
Motorola |
202 |
2N6385 |
Trans Darlington NPN 80V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
203 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
204 |
2N6386 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
205 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
206 |
2N6387 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
207 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
208 |
2N6388 |
Power 8A 80V Darlington NPN |
ON Semiconductor |
209 |
2N6388 |
SILICON NPN POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
210 |
2N6388 |
SILICON NPN POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
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