No. |
Part Name |
Description |
Manufacturer |
181 |
GM71VS17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
182 |
GM71VS17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
183 |
GM71VS17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
184 |
GM71VS17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
185 |
GM71VS17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
186 |
GM71VS17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
187 |
GM71VS17403CT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns |
Hynix Semiconductor |
188 |
GM71VS17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
189 |
GM71VS17403CT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns |
Hynix Semiconductor |
190 |
HB56SW3272ESK |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) |
Hitachi Semiconductor |
191 |
HB56SW3272ESK-5 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) |
Hitachi Semiconductor |
192 |
HB56SW3272ESK-6 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) |
Hitachi Semiconductor |
193 |
HC2509C |
Phase-Locked Loop Clock Distribution for Synchronous DRAM Applications |
Hynix Semiconductor |
194 |
HC2510 |
Phase-Locked Loop Clock Distribution for Synchronous DRAM Applications |
Hynix Semiconductor |
195 |
HC2510C |
Phase-Locked Loop Clock Distribution for Synchronous DRAM Applications |
Hynix Semiconductor |
196 |
HM5112805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
197 |
HM5112805FLTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
198 |
HM5112805FTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
199 |
HM5113805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
200 |
HM5113805FLTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
201 |
HM5113805FTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
202 |
HM5116100 |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
203 |
HM5116100S |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
204 |
HM5116100S-6 |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
205 |
HM5116100S-7 |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
206 |
HM5116405LS-5 |
16M EDO DRAM (4-Mword x 4-bit), 50ns |
Elpida Memory |
207 |
HM5116405LS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
208 |
HM5116405LS-7 |
16M EDO DRAM (4-Mword x 4-bit), 70ns |
Elpida Memory |
209 |
HM5116405LTS-5 |
16M EDO DRAM (4-Mword x 4-bit), 50ns |
Elpida Memory |
210 |
HM5116405LTS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
| | | |