| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N645A |
Silicon General Purpose Diode |
Texas Instruments |
| 182 |
1N646 |
Silicon General Purpose Diode |
Texas Instruments |
| 183 |
1N647 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 184 |
1N647 |
Silicon General Purpose Diode |
Texas Instruments |
| 185 |
1N648 |
Silicon General Purpose Diode |
Texas Instruments |
| 186 |
1N649 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 187 |
1N649 |
Silicon General Purpose Diode |
Texas Instruments |
| 188 |
1N649A |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 189 |
1N64A |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 190 |
1N64G |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 191 |
1N6512 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 192 |
1N658 |
100 V, 500 mW general purpose diode |
BKC International Electronics |
| 193 |
1N659 |
50 V, 500 mW general purpose diode |
BKC International Electronics |
| 194 |
1N660 |
100 V, 500 mW general purpose diode |
BKC International Electronics |
| 195 |
1N661 |
200 V, 500 mW general purpose diode |
BKC International Electronics |
| 196 |
1S1553 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 197 |
1S1554 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 198 |
1S1555 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 199 |
1S1885 |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 200 |
1S1885A |
Rectifiers Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 201 |
1S1887 |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 202 |
1S1887A |
Rectifiers Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 203 |
1S1888 |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 204 |
1S1888A |
Rectifiers Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 205 |
1SG1887 |
1.2 AMPS GENERAL PURPOSE PLASTIC RECTIFIERS VOLTAGE RANGE 100 TO 600 VOLTS FOWARD CURRENT 1.2 AMPERES |
SynSemi Semiconductor |
| 206 |
1SG1888 |
1.2 AMPS GENERAL PURPOSE PLASTIC RECTIFIERS VOLTAGE RANGE 100 TO 600 VOLTS FOWARD CURRENT 1.2 AMPERES |
SynSemi Semiconductor |
| 207 |
1SS379 |
Diode Silicon Epitaxial Planar Type General Purpose Rectifier Applications |
TOSHIBA |
| 208 |
2AS1832F |
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 209 |
2N1132 |
PNP Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 210 |
2N1420 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
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