No. |
Part Name |
Description |
Manufacturer |
181 |
DSC557-0343SI0T |
Clock and Timing - Clock Generation |
Microchip |
182 |
DSC557-0344FE0 |
Clock and Timing - Clock Generation |
Microchip |
183 |
DSC557-0344FE1 |
Clock and Timing - Clock Generation |
Microchip |
184 |
DSC557-0344FI0 |
Clock and Timing - Clock Generation |
Microchip |
185 |
DSC557-0344FI0T |
Clock and Timing - Clock Generation |
Microchip |
186 |
DSC557-0344FI1 |
Clock and Timing - Clock Generation |
Microchip |
187 |
DSC557-0344FI1T |
Clock and Timing - Clock Generation |
Microchip |
188 |
DSC557-0344FL1T |
Clock and Timing - Clock Generation |
Microchip |
189 |
DSC557-0344SI0 |
Clock and Timing - Clock Generation |
Microchip |
190 |
DSC557-0344SI1 |
Clock and Timing - Clock Generation |
Microchip |
191 |
DSC557-0344SI1T |
Clock and Timing - Clock Generation |
Microchip |
192 |
DSC557-05 |
Clock and Timing - Clock Generation |
Microchip |
193 |
DSC557-054444KI1 |
Clock and Timing - Clock Generation |
Microchip |
194 |
DSC557-054444KI1T |
Clock and Timing - Clock Generation |
Microchip |
195 |
FAN7631 |
2nd Generation Controller for Half-Bridge Resonant Converters |
Fairchild Semiconductor |
196 |
FDR146Z1 |
Identical to FDR146Z but with fixed bit pattern for character generation |
Mullard |
197 |
GC6001 |
Avalanche Diodes for Noise Generation |
Microsemi |
198 |
GC6002 |
Avalanche Diodes for Noise Generation |
Microsemi |
199 |
GC6003 |
Avalanche Diodes for Noise Generation |
Microsemi |
200 |
GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
201 |
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
202 |
GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
203 |
GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
204 |
GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
205 |
GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
206 |
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation |
TOSHIBA |
207 |
ICE 2A0565 |
Second Generation Integrated Power ICs with Enhanced Protection Features and Low Standby |
Infineon |
208 |
ICE 2A0565G |
Second Generation Integrated Power ICs with Enhanced Protection Features and Low Standby |
Infineon |
209 |
ICE 2A165 |
Second Generation Integrated Power ICs with Enhanced Protection Features and Low Standby |
Infineon |
210 |
ICE 2A265 |
Second Generation Integrated Power ICs with Enhanced Protection Features and Low Standby |
Infineon |
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