No. |
Part Name |
Description |
Manufacturer |
181 |
1N3046B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
182 |
1N3047B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
183 |
1N3048 |
1.0 WATT METAL SILICON ZENER DIODES |
Motorola |
184 |
1N3048B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
185 |
1N3049 |
1.0 WATT METAL SILICON ZENER DIODES |
Motorola |
186 |
1N3049B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
187 |
1N3050 |
1.0 WATT METAL SILICON ZENER DIODES |
Motorola |
188 |
1N3050B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
189 |
1N3051 |
1.0 WATT METAL SILICON ZENER DIODES |
Motorola |
190 |
1N3051B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
191 |
2017 |
28 and 48W true hermetically sealed proportionally controlled metal package heater hybrid |
Micropac Industries |
192 |
2032 |
28 and 48W true hermetically sealed proportionally controlled metal package heater hybrid |
Micropac Industries |
193 |
2N1302 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
194 |
2N1303 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
195 |
2N1304 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
196 |
2N1305 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
197 |
2N1306 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
198 |
2N1307 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
199 |
2N1308 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
200 |
2N1309 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
201 |
2N1487 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
202 |
2N1488 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
203 |
2N1489 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
204 |
2N1490 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
205 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
206 |
2N1613 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
207 |
2N1613A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
208 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
209 |
2N1711 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
210 |
2N1711A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
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