| No. |
Part Name |
Description |
Manufacturer |
| 181 |
PHE844RR6470MR06L2 |
EMI suppressor, class X1, metallized polypropylene |
etc |
| 182 |
PHE844RR6680MR06L2 |
EMI suppressor, class X1, metallized polypropylene |
etc |
| 183 |
PHE844RR7100MR06L2 |
EMI suppressor, class X1, metallized polypropylene |
etc |
| 184 |
PHE844RR7150MR06L2 |
EMI suppressor, class X1, metallized polypropylene |
etc |
| 185 |
PHE844RR7220MR06L2 |
EMI suppressor, class X1, metallized polypropylene |
etc |
| 186 |
PT8811A |
UHF Power Transistor 10W 12.5V gold metallization |
Motorola |
| 187 |
Q62703-F106 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 188 |
Q62703-F107 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 189 |
Q62703-F108 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 190 |
SD1290 |
50MHz 12.5V 40W Gold Metallization NPN silicon RF Transistor |
SGS Thomson Microelectronics |
| 191 |
SD1317 |
UHF Small signal 4GHz very low noise, gold metallized NPN RF transistor |
SGS Thomson Microelectronics |
| 192 |
SD1331 |
UHF Small signal 6GHz, very low noise, gold metallized NPN RF transistor |
SGS Thomson Microelectronics |
| 193 |
SD1332 |
UHF Small signal 5.5GHz, very low noise, gold metallized NPN RF transistor |
SGS Thomson Microelectronics |
| 194 |
SD1333 |
UHF Small signal 5.5GHz, very low noise, gold metallized NPN RF transistor |
SGS Thomson Microelectronics |
| 195 |
SD1425 |
800-960MHz 30W 24V gold metallized NPN RF transistor, high linearity Class AB operation |
SGS Thomson Microelectronics |
| 196 |
SD1511-08 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 197 |
SD1524-1 |
Gold Metallized silicon NPN power RF transistor for IFF/DME applications |
SGS Thomson Microelectronics |
| 198 |
SD1526-01 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 199 |
SD1526-08 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 200 |
SD1527-08 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 201 |
SD1528-8 |
Gold Metallized NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
| 202 |
SD1920-02 |
Gold metalliezed N-Channel MOS field-effect RF power transistor 50V, up to 200MHz 300W Class AB |
SGS Thomson Microelectronics |
| 203 |
SD1930 |
Gold metallized N-Channel MOS field-effect RF transistor 28V 400MHz 5W |
SGS Thomson Microelectronics |
| 204 |
SD4012 |
Gold metallized epitaxial silicon NPN planar RF transistor 3W |
SGS Thomson Microelectronics |
| 205 |
SUMIL3 |
Gold metallized epitaxial silicon NPN planar RF transistor 3W |
SGS Thomson Microelectronics |
| 206 |
SUMIL5FT |
Gold metallized N-Channel MOS field-effect RF transistor 28V 400MHz 5W |
SGS Thomson Microelectronics |
| 207 |
TP2037 |
VHF Power Transistor 35W 12.5V Gold Metallization for Reliability |
Motorola |
| 208 |
TP5060 |
UHF Linear Power Transistor 60W designed for 24-28V, gold metallization |
Motorola |
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