| No. |
Part Name |
Description |
Manufacturer |
| 181 |
12CE673 |
8-Pin/ 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory |
Microchip |
| 182 |
12F629 |
8-Pin, 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory |
Microchip |
| 183 |
12F629 |
8-Pin FLASH-Based 8-Bit CMOS Microcontrollers |
Microchip |
| 184 |
13003BR |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 185 |
13003BR |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 186 |
1307032 |
QuickMount Micro GPS Patch Antennas |
Tyco Electronics |
| 187 |
1307033 |
OnBoard Micro GPS Patch Antennas |
Tyco Electronics |
| 188 |
1334 |
STEPPER MOTOR CONTROLLERS |
ST Microelectronics |
| 189 |
1394 |
IEEE 1394 SERIAL BUS CONTROLLER |
Fujitsu Microelectronics |
| 190 |
1401 |
Silicon microwave diode |
TUNGSRAM |
| 191 |
1401-B |
Silicon microwave diode |
TUNGSRAM |
| 192 |
1401-D |
Silicon microwave diode |
TUNGSRAM |
| 193 |
1402 |
Silicon microwave diode |
TUNGSRAM |
| 194 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 195 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 196 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 197 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 198 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 199 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 200 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
| 201 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
| 202 |
145 |
PRODUCT/PROCESS CHANGE NOTIFICATION |
ST Microelectronics |
| 203 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 204 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
| 205 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 206 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 207 |
151911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 208 |
151911207-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 209 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 210 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
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